Abstract:Anisotropy refers to the property of a material exhibiting directionally dependent features. In this paper, we introduce black phosphorous (BP), the most stable allotrope of phosphorus in layered orthorhombic structure with a bandgap of 0.3 eV in bulk, as a unique 2D material in which electrons, phonons and their interactions with photons behave in a highly anisotropic manner within the plane of the layers. The unique anisotropic nature of BP thin films is revealed using angle-resolved Raman and infrared spectroscopies, together with angle-resolved transport study. For 15 nm thick BP, we measure Hall mobility of 1000 and 600 cm^2/Vs for holes along the light (x) and heavy (y) effective mass directions, respectively, at 120 K. These BP thin films also exhibit large and anisotropic in-plane optical conductivity from 2 to 5 micrometer wavelength. Field effect transistors using 4 to 30 layers of BP (2 to 15 nm) as channel material exhibit an on-off current ratio exceeding 10^5, a field-effect mobility of 205 cm^2/Vs, and good saturation properties all at room temperature, suggesting its promising future in high performance thin film electronics. By introducing narrow bandgap BP into the 2D material family, we fill the space between semi-metallic graphene and large bandgap TMDCs, where great potentials for infrared optoelectronics lie. Most importantly, the unique anisotropic nature of this intriguing material creates unprecedented possibilities for the realization of conceptually new optoelectronic and electronic devices in which angle-dependent physical properties are highly desirable.

High-mobility transport symmetry and effect of strain on electronic and optical properties in few-layer blue phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Strain-induced band structure and mobility modulation in graphitic blue phosphorus

Remarkable Anisotropic Phonon Response in Uniaxially Strained Few-Layer Black Phosphorus

In-Plane Uniaxial Strain in Black Phosphorus Enables the Identification of Crystalline Orientation.

Strain-engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus.

The Stacking Dependent Electronic Structure And Optical Properties Of Bilayer Black Phosphorus

Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics

Anisotropic band evolution of bulk black phosphorus induced by the uniaxial tensile strain

The electronic structure, mechanical flexibility and carrier mobility of black arsenic-phosphorus monolayers: a first principles study.

Achieving indirect-to-direct band gap transition and enhanced photocatalytic performance in blue phosphorene through doping and strain

Electronic and optical properties of bilayer blue phosphorus

Layer-dependent exciton polarizability and the brightening of dark excitons in few-layer black phosphorus

Large Frequency Change with Thickness in Interlayer Breathing Mode—Significant Interlayer Interactions in Few Layer Black Phosphorus

Engineering of the electronic structure of Fe-adsorbed black phosphorus monolayer by strain

Effect of Multilayer Structure, Stacking Order and External Electric Field on the Electrical Properties of Few-Layer Boron-Phosphide.

Significant Band Gap Induced by Uniaxial Strain in Graphene/blue Phosphorene Bilayer

Tunable intraband optical conductivity and polarization-dependent epsilon-near-zero behavior in black phosphorus

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Anisotropic Band Evolution of Bulk Black Phosphorus Induced by Uniaxial Tensile Strain