Abstract:In this contribution, using DFT calculations, we take systematic insights into the modified structural and electronic properties of two-dimensional (2D) blue phosphorus (blueP)/graphene-like (g-C3N) heterostructure via an external vertical strain. First, four types of representative stacking configurations are considered, i.e., I, II, III and IV pattern, respectively. The calculated results indicate that the III configuration behaves more energetically, structurally and dynamic stable, under which it is chosen for the following calculations. The lattice constants of the individual blueP and g-C3N monolayers, along with their calculated band gaps, are consistent with the previous reported works, supporting the reliability of our theoretical models and computational details. Besides, the relatively large difference in the work function (W-F) between the isolated blueP and C3N monolayers illustrates a charge transfer from g-C3N to blueP layer, in good accordance to the analysis of charge density difference and Mulliken atomic population of 0.16 e. A built-in electric field (E-int) has been formed due to the charge transfer at the interface region, which can efficiently hinder the recombination of photongenerated electron-hole pairs, suggesting its significant application prospect in novel optoelectronic devices. A type-II band alignment is presented for the blueP/g-C3N heterostructure, demonstrating it great significance for the application in photoelectronic materials. Furthermore, tunable interlayer distances from 2.2 to 5.0 angstrom are employed to obtain modulated electronic properties for the blueP/g-C3N heterostructure. Interestingly, there occurs a semiconductor-to-metal transition when D larger than 4.6 angstrom, indicating its promising application in the field of electronics and nano-electronics. Moreover, tailored work functions can also be acquired by changing the interlayer distance. These findings together predict significant potential for the blueP/g-C3N heterostructure with tunable interlayer distances applied as next-generation nanoelectronic and optoelectronic devices, along with a photocatalyst.

Strain-induced band structure and mobility modulation in graphitic blue phosphorus

Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field

The Phosphorene Under The External Electronic Field And Strain

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

High-mobility transport symmetry and effect of strain on electronic and optical properties in few-layer blue phosphorus

Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Strain-engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus.

Strain engineering the charged-impurity-limited carrier mobility in phosphorene

Significant Band Gap Induced by Uniaxial Strain in Graphene/blue Phosphorene Bilayer

Semiconductor-metal Transition Induced by Combined Electric Field and External Strain in Bilayer Phosphorene

First-principles Insights into Efficient Band Gap Engineering of the Blue Phosphorus/g-C3n Bilayer Heterostructure Via an External Vertical Strain

Strain-induced Weyl and Dirac states and direct-indirect gap transitions in group-V materials

Strain-controlled thermoelectric properties of phosphorene hetero-bilayers

Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Performance Analysis of uniaxially strained Monolayer Black Phosphorus and Blue Phosphorus n-MOSFET and p-MOSFET

Electronic Properties of Blue Phosphorene/transition Metal Dichalcogenides Van Der Waals Heterostructures under In-Plane Biaxial Strains

Strain-tunable Photogalvanic Effect in Phosphorene

Deformation-induced band gap variation in phosphorene: tight-binding model vs. first-principles simulations

Defects and Strain Engineering of Structural, Elastic, and Electronic Properties of Boron-Phosphide Monolayer: A Hybrid Density Functional Theory Study

Straintronics in Phosphorene: Tensile vs Shear Strains and Their Combinations for Manipulating the Band Gap

Modulation of the electronic properties of blue phosphorene/stanene heterostructures by electric field and interlayer distance