Strain modulation of the exciton anisotropy and carrier lifetime in black phosphorene

Xiaolong Wang,Weiwei Gao,Jijun Zhao

DOI: https://doi.org/10.1039/d2cp00670g

IF: 3.3

2022-01-01

Physical Chemistry Chemical Physics

Abstract:The distribution of excitons in black phosphorene can be tuned by the tensile strain, and the carrier lifetime is also extended by the tensile strain.

chemistry, physical,physics, atomic, molecular & chemical

What problem does this paper attempt to address?

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Bo Zheng,Naichao Si,Guoxin Xie,Quan Wang

DOI: https://doi.org/10.1016/j.physleta.2016.12.046

IF: 2.707

2017-01-01

Physics Letters A

Abstract:Black phosphorus has recently appeared as a promising two-dimensional material for applications in high performance nanoelectronics. Its single- and few-atomic layer forms in field-effect transistors have attracted a lot of attention due to the tunable bandgap (0.3-2.0 eV), high carrier mobility (1000 cm(2) V-1 s(-1)) and decent on-off ratios (10(5)). Here, we demonstrate a suspended black phosphorus field effect transistor (BP-FET) and utilize Raman spectroscope to characterize the strain on the effects of Raman phonon. We find that red shifts appear in all the three vibrational modes (A(g)(i), B-2g and A(g)(2) in different degrees. Among them, 14 mode is most sensitive to the tensile strain. We further investigate the electronic properties with a Cascade semi-automatic probe station. The linear relationships in the output curves indicate the contacts between black phosphorus and electrodes are ohmic contacts. The transfer characteristic curves declare the drain current modulation is similar to 7.6 x 10(3) for the hole conduction and similar to 57 for the electron conduction. Mobility of this device is found to be 347.5 cm(2) V-1 s(-1) and 4.9 cm(2) V-1 s(-1) for the hole and electron conduction, respectively. These results provide a theoretical basis for the coordination of high-performance black phosphorus electronic components. (C) 2016 Elsevier B.V. All rights reserved.
Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field

yan li,shengxue yang,jingbo li

DOI: https://doi.org/10.1021/jp506881v

2014-01-01

Abstract:The structural and electronic properties of the bulk and ultrathin black phosphorus and the effects of in-plane strain and out-of-plane electrical field on the electronic structure of phosphorene are investigated using first-principles methods. The computed results show that the bulk and few-layer black phosphorus from monolayer to six-layer demonstrates inherent direct bandgap features ranging from 0.5 to 1.6 eV. Interestingly, the band structures of the bulk and few-layer black phosphorus from X point via A point to Y point present degenerate distribution, which shows totally different partial charge dispersions. Moreover, strong anisotropy in regard to carrier effective mass has been observed along different directions. The response of phosphorene to in-plane strain is diverse. The bandgap monotonically decreases with increasing compressive strain, and semiconductor-to-metal transition occurs for phosphorene when the biaxial compressive reaches -9%. Tensile strain first enlarges the gap until the strain reaches around 4%, after which the bandgap exhibits a descending relationship with tensile strain. The bandgaps of the pristine and deformed phosphorene can also be continuously modulated by the electrical field and finally close up at about 15 V/nm. Besides, the electron and hole effective mass along different directions exhibits different responses to the combined impact of strain and electrical field.
Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

tian zhang,jiahe lin,yanmei yu,xiangrong chen,wuming liu

2015-01-01

Abstract: Quantum spin Hall (QSH) state of matter has a charge excitation bulk bandgap and a pair of gapless spin-filtered edge-states, which can support backscattering-free transport. Bilayer phosphorene possesses a large tunable bandgap and high carrier mobilities, and therefore has the widely potential applications in nanoelectronics and optics. Here, we demonstrate an strain-induced electronic topological phase transition from a normal to QSH state in bilayer phosphorene accompanying by a band inversion that changes $\mathbbm{Z}_{2}$ from 0 to 1, which is highly dependent on the interlayer stacking. When the bottom layer is shifted by 1/2 unit cell along axial direction with respect to the top layer, the topological bandgap reaches up to 92.5 meV, which is sufficiently large to realize the QSH effect at room temperature. Its optical absorption spectrum becomes broadened, and even extends to the far-infra-red region leading to a wider range of brightness, which is highly desirable in optic devices.
Strain engineering the charged-impurity-limited carrier mobility in phosphorene

Yawar Mohammadi,Borhan Arghavani Nia

DOI: https://doi.org/10.1016/j.spmi.2015.10.049

2015-11-13

Abstract:We investigate, based on the tight-binding model and in the linear deformation regime, the strain dependence of the electronic band structure of phosphorene, exposed to a uniaxial strain in one of its principle directions, the normal, the armchair and the zigzag directions. We show that the electronic band structure of strained phosphorene, for experimentally accessible carrier densities and uniaxial strains, is well described by a strain-dependent decoupled electron-hole Hamiltonian. Then, employing the decoupled Hamiltonian, we consider the strain dependence of the charged-impurity-limited carrier mobility in phosphorene, for both types of carrier, arbitrary carrier density and in both armchair and zigzag directions. We show that a uniaxial tensile (compressive) strain in the normal direction enhances (weakens) the anisotropy of the carrier mobility, while a uniaxial strain in the zigzag direction acts inversely. Moreover applying a uniaxial strain in the armchair direction is shown to be ineffective on the anisotropy of the carrier mobility. These will be explained based on the effect of the strain on the carrier effective mass.

Mesoscale and Nanoscale Physics
Strain-engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus.

Ruixiang Fei,Li Yang

DOI: https://doi.org/10.1021/nl500935z

IF: 10.8

2014-01-01

Nano Letters

Abstract:Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this unique anisotropic free-carrier mobility can be controlled by using simple strain conditions. With the appropriate biaxial or uniaxial strain (4-6%), we can rotate the preferred conducting direction by 90°. This will be useful for exploring unusual quantum Hall effects and exotic electronic and mechanical applications based on phosphorene.
Modulation of Carrier Lifetime in MoS2 Monolayer by Uniaxial Strain

Hao Hong,Yang Cheng,Chunchun Wu,Chen Huang,Can Liu,Wentao Yu,Xu Zhou,Chaojie Ma,Jinhuan Wang,Zhihong Zhang,Yun Zhao,Jie Xiong,Kaihui Liu

DOI: https://doi.org/10.1088/1674-1056/ab99ba

2020-01-01

Chinese Physics B

Abstract:Carrier lifetime is one of the most fundamental physical parameters that characterizes the average time of carrier recombination in any material. The control of carrier lifetime is the key to optimizing the device function by tuning the electro–optical conversion quantum yield, carrier diffusion length, carrier collection process, etc. Till now, the prevailing modulation methods are mainly by defect engineering and temperature control, which have limitations in the modulation direction and amplitude of the carrier lifetime. Here, we report an effective modulation on the ultrafast dynamics of photoexcited carriers in two-dimensional (2D) MoS2 monolayer by uniaxial tensile strain. The combination of optical ultrafast pump–probe technique and time-resolved photoluminescence (PL) spectroscopy reveals that the carrier dynamics through Auger scattering, carrier–phonon scattering, and radiative recombination keep immune to the strain. But strikingly, the uniaxial tensile strain weakens the trapping of photoexcited carriers by defects and therefore prolongs the corresponding carrier lifetime up to 440% per percent applied strain. Our results open a new avenue to enlarge the carrier lifetime of 2D MoS2, which will facilitate its applications in high-efficient optoelectronic and photovoltaic devices.
Strain-tunable Photogalvanic Effect in Phosphorene

J. H. Wu,F. Zhai,J. Q. Lu,J. Wu,X. Feng

DOI: https://doi.org/10.1016/j.mtcomm.2020.101154

IF: 3.8

2020-01-01

Materials Today Communications

Abstract:We investigate the strain manipulation of photocurrent induced by a linearly-polarized light in a phosphorene-based two-terminal system. A local out-of-plane gate voltage is applied to break the inversion symmetry of pristine phosphorene. The photocurrent under zero source-drain bias is calculated by the nonequilibrium Green's function formalism combined with density-functional theory. The photocurrent in the strain-free system is highly anisotropic and depends on the applied region of the gate voltage. Under a small tensile strain with strength ≈2%, the photoresponse for lights in the whole visible range is suppressed greatly. The photocurrent along the zigzag direction decay quickly with the strain strength. In contrast, the photocurrent along the armchair direction can be enhanced by a moderate strain strength ≈8% in some region of photon energy.
Strong Thermal Transport Anisotropy and Strain Modulation in Single-Layer Phosphorene

Zhun-Yong Ong,Yongqing Cai,Gang Zhang,Yong-Wei Zhang

DOI: https://doi.org/10.1021/jp5079357

2014-10-22

The Journal of Physical Chemistry C

Abstract:Using first-principles calculations and the nonequilibrium Green’s function method, we investigate ballistic thermal transport in two-dimensional monolayer phosphorene sheet. A significant crystallographic orientation dependence of thermal conductance is observed, with room temperature thermal conductance along zigzag direction being 40% higher than that along armchair direction. Furthermore, we find that the thermal conductance anisotropy with the orientation can be tuned by applying strain. In particular, the zigzag-oriented thermal conductance is enhanced when a zigzag-oriented strain is applied but decreases when an armchair-oriented strain is applied; whereas the armchair-oriented thermal conductance always decreases when either a zigzag- or an armchair-oriented strain is applied. The present work suggests that the remarkable thermal transport anisotropy and its strain-modulated effect in single-layer phosphorene may be used for thermal management in phosphorene-based electronics and optoelectronic devices.

chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary
Strain-induced band structure and mobility modulation in graphitic blue phosphorus

L.Z. Liu,X.L. Wu,X.X. Liu,Paul K. Chu

DOI: https://doi.org/10.1016/j.apsusc.2015.08.125

IF: 6.7

2015-11-01

Applied Surface Science

Abstract:The effects of external strain on the electronic structure and carrier mobility of graphitic blue phosphorus are investigated theoretically. Symmetry breaking induced by the in-plane strain not only modulates the band structure, but also changes the carrier population at the valence band maximum and conduction band minimum so that the transport current density can be regulated. Compressed deformation in the direction normal to the plane transforms the blue phosphorus into an in-plane structure and the superfluous electrons reduce the band gap giving rise to a semiconductor–metal transition. Our theoretical assessment reveals that strain engineering is a useful method to design electronic devices.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Can Wang,Qinglin Xia,Yaozhuang Nie,Guanghua Guo

DOI: https://doi.org/10.1063/1.4916254

IF: 2.877

2015-01-01

Journal of Applied Physics

Abstract:The electronic properties of two-dimensional monolayer and bilayer phosphorene subjected to uniaxial and biaxial strains have been investigated using first-principles calculations based on density functional theory. Strain engineering has obvious influence on the electronic properties of monolayer and bilayer phosphorene. By comparison, we find that biaxial strain is more effective in tuning the band gap than uniaxial strain. Interestingly, we observe the emergence of Dirac-like cones by the application of zigzag tensile strain in the monolayer and bilayer systems. For bilayer phosphorene, we induce the anisotropic Dirac-like dispersion by the application of appropriate armchair or biaxial compressive strain. Our results present very interesting possibilities for engineering the electronic properties of phosphorene and pave a way for tuning the band gap of future electronic and optoelectronic devices.
Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus.

Hao Chen,Xun Ge,Yiming Wang,Qianqian Xu,Zhifeng Li,Xiaohao Zhou,Jiaming Hao,Weida Hu,Shengjuan Li,Xingjun Wang

DOI: https://doi.org/10.1021/acs.jpclett.3c00145

2023-01-01

Abstract:Strain engineering is a powerful tool that can modulate semiconductor device performance. Here, we demonstrate that the bandgap of thin film (similar to 40 nm) black phosphorus (bP) can be continuously tuned from 2.9 to 3.9 mu m by applying an in-plane uniaxial strain, as evidenced by mid-infrared photoluminescence (PL) spectroscopy. The deduced bandgap strain coefficients are similar to 103 meV %-1, which coincide with those obtained in few-layer bP. On the basis of first-principles calculations, the origin of the uniaxial tensile strain-induced PL enhancement is suggested to be due to the increase in both the effective mass ratio (me*/mh*) and the bandgap, leading to the increment of the radiative efficiency. Moreover, the mid-infrared PL emission remains perfectly linear-polarized along the armchair direction regardless of tensile or compressive strain. The highly tunable bandgap of bP in the mid-infrared regime opens up opportunities for the realization of mid-infrared light-emitting diodes and lasers using layered materials.
Strong Modulation Of Band Gap, Carrier Mobility And Lifetime In Two-Dimensional Black Phosphorene Through Acoustic Phonon Excitation

Hongli Guo,Weibin Chu,Oleg V Prezhdo,Qijing Zheng,Jin Zhao

DOI: https://doi.org/10.1021/acs.jpclett.1c00747

2021-01-01

Abstract:Black phosphorene (BP) has been attracting intense attention due to its high charge mobility and potential applications in electronic, optical and optoelectronic devices. We demonstrate by ab initio molecular dynamics and nonadiabatic quantum dynamics simulations that the excitation of out-of-plane acoustic phonon (ZA) provides strong modulation of the band gap, carrier lifetime and carrier mobility in BP. A 1% tensile strain can significantly enhance ZA mode excitation at room temperature, distinctly reducing the band gap, carrier mobility, and lifetime. These electronic properties can be tuned easily by influencing the excitation amplitude of the ZA mode. Unique to the family of two-dimensional materials, the ZA mode plays an essential role in controlling the electronic properties of BP. The results of our study provide valuable guidelines for design of functional nanodevices based on 2D BP.
Strain Controlled Thermal Regulator Realized in Two-Dimensional Black and Blue Phosphorene In-Plane Heterostructure

Mingyue Xia,Luneng Zhao,Yuan Chang,Hongsheng Liu,Gang Zhang,Wuxing Zhou,Jijun Zhao,Junfeng Gao

DOI: https://doi.org/10.1103/physrevb.109.104106

IF: 3.7

2024-01-01

Physical Review B

Abstract:The reversible phase transition of two-dimensional material allotropes induced by strain engineering has promising applications in nanoelectromechanical systems and memories. Here, we report a series of black and blue phosphorene superlattice (BBPS) can be formed by reversible phase transition between them. The phase transition is with low-energy barrier and can be well regulated by strain engineering, until black phosphorene phase is fully transformed into blue phosphorene phase under strain of epsilon = 23%. At room temperature, BBPS exhibits a high phase transition rate of about 106 Hz, which enables reversible phase transition rapidly. Beyond, the unique in-plane heterostructure of BBPS suppresses phonon transmission, lowering thermal conductivity to only 25.6% of black phosphorene. Beyond, nonequilibrium Green's function calculations indicate the thermal conductivity crossing the black-blue phosphorene heterojunction suddenly drops to only 1/3 that of black phosphorene. Therefore, strain engineering can not only achieve reversible phase transition but also modulate the thermal conductivity in very large range, which is excellent in the field of heat flow manipulation and thermal management.
Straintronics in Phosphorene: Tensile vs Shear Strains and Their Combinations for Manipulating the Band Gap

Anastasiia G. Solomenko,Ihor Y. Sahalianov,Taras M. Radchenko,Valentyn A. Tatarenko

DOI: https://doi.org/10.1038/s41598-023-40541-7

2023-06-08

Abstract:We study the effects of the uniaxial tensile strain and shear deformation as well as their combinations on the electronic properties of single-layer black phosphorene. The evolutions of the strain-dependent band gap are obtained using the numerical calculations within the tight-binding (TB) model as well as the first-principles (DFT) simulations and compared with previous findings. The TB-model-based findings show that the band gap of the strain-free phosphorene agrees with the experimental value and linearly depends on both stretching and shearing: increases (decreases) as the stretching increases (decreases), whereas gradually decreases with increasing the shear. A linear dependence is less or more similar as compared to that obtained from the ab initio simulations for shear strain, however disagrees with a non-monotonic behaviour from the DFT-based calculations for tensile strain. Possible reasons for the discrepancy are discussed. In case of a combined deformation, when both strain types (tensile/compression + shear) are loaded simultaneously, their mutual influence extends the realizable band gap range: from zero up to the values respective to the wide-band-gap semiconductors. At a switched-on combined strain, the semiconductor-semimetal phase transition in the phosphorene is reachable at a weaker (strictly non-destructive) strain, which contributes to progress in fundamental and breakthroughs.

Materials Science,Mesoscale and Nanoscale Physics
Strain-tunable Lattice and Energy Gap in Bulk Black Phosphorus

Yafeng Deng,Yafei Zhao,Yongkang Xu,Xingze Dai,Shuanghai Wang,Kun He,Yongbing Xu,Liang He

DOI: https://doi.org/10.1063/5.0225155

IF: 1.697

2024-01-01

AIP Advances

Abstract:This study employs an optimized model to investigate the lattice deformation and band structure evolutions induced by the tensile strain along the zigzag direction of bulk black phosphorus (bulk BP) and the physical mechanisms behind it. It has been found that the tensile strain leads to the lattice expansion along the zigzag direction, while contracting along the armchair direction, and the out-of-plane lattice undergoes sequential expansion and contraction. This is also accompanied by an increasing and decreasing of the bulk energy gap and eventually reaching zero. Furthermore, one hopping factor has been proposed to connecting the interlayer spacing and the interlayer interaction, which successfully explains the strain-induced evolutions of the bulk energy gap. This work provides a theoretical reference for the strain-induced band engineering of bulk BP.
Tension-Induced Phase Transformation and Anomalous Poisson Effect in Violet Phosphorene

Penghua Ying,Xiaowen Li,Xiaobin Qiang,Yao Du,Jin Zhang,Lang Chen,Zheng Zhong

DOI: https://doi.org/10.1016/j.mtphys.2022.100755

IF: 11.021

2022-01-01

Materials Today Physics

Abstract:Two-dimensional violet phosphorene (VP) nanosheets are promising semiconductor materials with unique cross structures distinct from those of their allotropes such as black phosphorene and blue phosphorene, but their mechanical behaviors remain almost unexplored. By using the first-principles calculations, in this paper we investigate the mechanical behaviors of monolayer, bilayer, and bulk VP under uniaxial tension. A phase transformation from the open-pore phase to closed-pore phase is observed in VP structures when under a specific tensile strain. It is revealed that the phase transformation is attributed to the competition between the rotation and elongation of sub-nano rods in VP structures during the loading process. Due to the phase transformation, the in-plane Poissons ratio of monolayer VP can become greater than 1.2, while the bulk VP possesses a negative out-of-plane Poissons ratio with a magnitude up to -0.3 at a certain strain. These results indicate that Poisson effects in VP are superior to those in any other existing two-dimensional materials. In addition, based on the tensor analysis of elastic constants, a strong mechanical anisotropy is observed in VP structures both before and after the phase transformation. Besides the mechanical properties, the band gap of all VP structures decreases as the applied tensile strain increases, which can eventually transform into the metallic state prior to their fracture. The combination of unique phase transformation, anomalous Poisson effect, strong mechanical anisotropy and tunable electronic properties render VP be a novel nanoscale metamaterial with multifunctional applications.
Anisotropic band evolution of bulk black phosphorus induced by the uniaxial tensile strain

Yafeng Deng,Yilin Zhang,Yafei Zhao,Yongkang Xu,Xingze Dai,Shuanghai Wang,Xianyang Lu,Yao Li,Yongbing Xu,Liang He

DOI: https://doi.org/10.1088/0256-307x/41/3/037102

2024-02-02

Chinese Physics Letters

Abstract:In this study, the anisotropic band structure and its evolution under tensile strains along different crystallographic directions in bulk black phosphorus (BP) have been investigated by angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). The results show that there are band crossings in the Z-L (armchair) direction, but not in the Z-A (zigzag) direction. And the corresponding dispersion-k distributions near valence band maximum (VBM) exhibit quasi-linear or quadratic relationships, respectively. Along the armchair direction, the tensile strain expands the interlayer spacing and shifts the VBM to deeper levels with a slope of -16.2 meV/% strain. On the other hand, the tensile strain along the zigzag direction compresses the interlayer spacing and causes the VBM to shift towards shallower levels with a slope of 13.1 meV/% strain. This work demonstrates an effective way of band engineering of bulk BP by uniaxial tensile strain, elucidates the mechanism behind it, and paves the way for strain-regulated optoelectronic devices based on bulk BP.

physics, multidisciplinary
Anisotropic Band Evolution of Bulk Black Phosphorus Induced by Uniaxial Tensile Strain

Yafeng Deng,Yilin Zhang,Yafei Zhao,Yongkang Xu,Xingze Dai,Shuanghai Wang,Xianyang Lu,Yao Li,Yongbing Xu,Liang He

DOI: https://doi.org/10.1088/0256-307x/41/3/037102

2024-01-01

Chinese Physics Letters

Abstract:We investigate the anisotropic band structure and its evolution under tensile strains along different crystallographic directions in bulk black phosphorus (BP) using angle-resolved photoemission spectroscopy and density functional theory. The results show that there are band crossings in the Z-L (armchair) direction, but not in the Z-A (zigzag) direction. The corresponding dispersion-k distributions near the valence band maximum (VBM) exhibit quasi-linear or quadratic relationships, respectively. Along the armchair direction, the tensile strain expands the interlayer spacing and shifts the VBM to deeper levels with a slope of -16.2 meV/% strain. Conversely, the tensile strain along the zigzag direction compresses the interlayer spacing and causes the VBM to shift towards shallower levels with a slope of 13.1 meV/% strain. This work demonstrates an effective method for band engineering of bulk BP by uniaxial tensile strain, elucidates the mechanism behind it, and paves the way for strain-regulated optoelectronic devices based on bulk BP.
The Phosphorene Under The External Electronic Field And Strain

Tao Wang,Yan Liu,Wen Wen,Wei Guo,You Yin

DOI: https://doi.org/10.1142/S0129183117501315

2017-01-01

International Journal of Modern Physics C

Abstract:Using the ab initio plane-wave ultrasoft pseudopotential method based on the generalized gradient approximation (GGA), we investigate the bandgap tuning in monolayer phosphorene in terms of applying external electric fields perpendicular to the layers. The bandgap continuously decreases with the applied electric fields, eventually rendering them metallic. The phenomenon is explained by the giant stark effect. The interlayer P-P distance also result in the semiconductor-to-metal transition. The phosphorene exhibits the significant bandgap tuning ability under different strains with 5% variation. Our investigations show the bandgap change for the fabrication of novel electronic and photonic devices.
In-Plane Uniaxial Strain in Black Phosphorus Enables the Identification of Crystalline Orientation.

Shuqing Zhang,Nannan Mao,Juanxia Wu,Lianming Tong,Jin Zhang,Zhirong Liu

DOI: https://doi.org/10.1002/smll.201700466

IF: 13.3

2017-01-01

Small

Abstract:Identification of the crystalline axis of anisotropic black phosphorus (BP) is important for investigating its physical properties, as well as for optical and electronic applications. Herein, it is showed that by applying in-plane uniaxial strain and measuring the changes of the Raman shifts, the crystalline axis of BP can be reliably determined. The strain effects on the Raman shifts are angle-dependent, and they can be expressed as a combination of the Raman responses under zigzag and armchair strain. Differing from previous polarized optical spectroscopic methods where the Raman intensity is analyzed, the proposed method uses the Raman frequency shift, which is less affected by laser polarization, excitation wavelength, the sample thickness, and the substrate. The effective strain applied on BP from the stretched substrate is estimated, and the results show that only 20 to 40% of the strain can be effectively transferred to BP flakes from a polyethylene terephthalate substrate. Our method provides not only an effective and robust approach to identify the crystalline orientation of layered BP, but it is also a model to extract additional information in strain-related studies. It can also be extended to other 2D anisotropic materials.

Strain modulation of the exciton anisotropy and carrier lifetime in black phosphorene

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

Strain engineering the charged-impurity-limited carrier mobility in phosphorene

Strain-engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus.

Modulation of Carrier Lifetime in MoS2 Monolayer by Uniaxial Strain

Strain-tunable Photogalvanic Effect in Phosphorene

Strong Thermal Transport Anisotropy and Strain Modulation in Single-Layer Phosphorene

Strain-induced band structure and mobility modulation in graphitic blue phosphorus

Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Uniaxial Strain-Induced Tunable Mid-infrared Light Emission from Thin Film Black Phosphorus.

Strong Modulation Of Band Gap, Carrier Mobility And Lifetime In Two-Dimensional Black Phosphorene Through Acoustic Phonon Excitation

Strain Controlled Thermal Regulator Realized in Two-Dimensional Black and Blue Phosphorene In-Plane Heterostructure

Straintronics in Phosphorene: Tensile vs Shear Strains and Their Combinations for Manipulating the Band Gap

Strain-tunable Lattice and Energy Gap in Bulk Black Phosphorus

Tension-Induced Phase Transformation and Anomalous Poisson Effect in Violet Phosphorene

Anisotropic band evolution of bulk black phosphorus induced by the uniaxial tensile strain

Anisotropic Band Evolution of Bulk Black Phosphorus Induced by Uniaxial Tensile Strain

The Phosphorene Under The External Electronic Field And Strain

In-Plane Uniaxial Strain in Black Phosphorus Enables the Identification of Crystalline Orientation.