Shear Strain Induced Modulation to the Transport Properties of Graphene

Xin He,Li Gao,Ning Tang,Junxi Duan,Fujun Xu,Xinqiang Wang,Xuelin Yang,Weikun Ge,Bo Shen
DOI: https://doi.org/10.1063/1.4894082
IF: 4
2014-01-01
Applied Physics Letters
Abstract:Applying shear strain has been considered as a hopeful method to open a band gap of graphene. To study the transport properties of graphene under shear strain, a device was fabricated to apply shear strain, up to 16.7%, to graphene grown by chemical vapor deposition method. A top gate with ionic liquid as the dielectric material was used to tune the carrier density. The conductance of the Dirac point and carrier mobility is found to increase with a comparatively small increasing strain but then decrease with a larger one. Such a behavior might be related to several factors: the wrinkles, the transverse conducting channels, and the grain boundaries of graphene. Our study is helpful to further understand the strain engineering in graphene.
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