Abstract:Van der Waals (vdW) heterostructures consisting of Bernal bilayer graphene (BLG) and hexagonal boron nitride (hBN) are investigated. By performing first-principles calculations we capture the essential BLG band structure features for several stacking and encapsulation scenarios. A low-energy model Hamiltonian, comprising orbital and spin-orbit coupling (SOC) terms, is employed to reproduce the hBN-modified BLG dispersion, spin splittings, and spin expectation values. Most important, the hBN layers open an orbital gap in the BLG spectrum, which can range from zero to tens of meV, depending on the precise stacking arrangement of the individual atoms. Therefore, large local band gap variations may arise in experimentally relevant moiré structures. Moreover, the SOC parameters are small (few to tens of $\mu$eV), just as in bare BLG, but are markedly proximity modified by the hBN layers. Especially when BLG is encapsulated by monolayers of hBN, such that inversion symmetry is restored, the orbital gap and spin splittings of the bands vanish. In addition, we show that a transverse electric field mainly modifies the potential difference between the graphene layers, which perfectly correlates with the orbital gap for fields up to about 1~V/nm. Moreover, the layer-resolved Rashba couplings are tunable by $\sim 5~\mu$eV per V/nm. Finally, by investigating twisted BLG/hBN structures, with twist angles between 6$^{\circ}$ -- 20$^{\circ}$, we find that the global band gap increases linearly with the twist angle. The extrapolated $0^{\circ}$ band gap is about 23~meV and results roughly from the average of the stacking-dependent local band gaps. Our investigations give new insights into proximity spin physics of hBN/BLG heterostructures, which should be useful for interpreting experiments on extended as well as confined (quantum dot) systems.

Modulation of Electronic Properties of Hexagonal Boron Nitride Bilayers by an Electric Field: A First Principles Study

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Electric Field Effect of Sliding Graphene/hexagonal Boron Nitride Heterobilayer

Stability and Electronic Properties of Hybrid SnO Bilayers: SnO/Graphene and SnO/BN

Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Effect of Multilayer Structure, Stacking Order and External Electric Field on the Electrical Properties of Few-Layer Boron-Phosphide.

Half Metallic and Insulating Phases in BN/Graphene Lateral Heterostructures

First principle investigation of electronic and optical properties of graphene/h-BN bilayers using Tran-Blaha-modified Becke-Johnson potential

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Impact of the angular alignment on the crystal field and intrinsic doping of bilayer graphene/BN heterostructures

Band Gap Modulation by Two-Dimensional h-BN Nanostructure

First principle study on the transition of electronic, mechanic and piezoelectric property of hexagonal Boron Nitride nanotube

Electronic structures of organic molecule encapsulated BN nanotubes under transverse electric field

Electronic and transport properties of a biased multilayer hexagonal boron nitride

Energy-gap modulation of boron nitride nanoribbons by transverse electric fields: First-principles calculations

Mechanical and vibrational behaviors of bilayer hexagonal boron nitride in different stacking modes

Electronic and Spin-Orbit Properties of hBN Encapsulated Bilayer Graphene

Flexoelectricity in hexagonal boron nitride monolayers

Electronic and optical properties of h-BN nanosheet: A first principles calculation

Electronic properties of twisted bilayer graphene suspended and encapsulated with hexagonal boron nitride