Abstract:Abstract Since the discovery of graphene and other two-dimensional (2D) materials in recent years, heterostructures composed of multilayered 2D materials have attracted immense research interest. This is mainly due to the potential prospects of the heterostructures for basic and applied applications related to the emerging technology of energy-efficient optoelectronic devices. In particular, heterostructures of graphene with 2D materials of similar structure have been proposed to open up the band gap to tune the transport properties of graphene for a variety of technological applications. In this paper, we propose a heterostructure scheme of band-gap engineering and modification of the electronic band structure of graphene via the heterostructure of graphene–boron nitride (GBN) based on first-principles calculations. For a comparative analysis of the properties of the proposed GBN heterostructure, we employ Kohn–Sham density functional theory (DFT) using local density and generalized gradient approximations within Perdew–Burke–Ernzehof parameterization. To account for weak interlayer van der Waals interactions, we employ the semi-empirical dispersion-corrected DFT scheme of Grimme, called the DFT-D2 approximation. In the vertical stacking arrangement of boron-nitride-doped graphene with hexagonal boron nitride, we predict a band-gap opening of 1.12 eV which, to our knowledge, is the largest value attained for this kind of system. The impact of interlayer spacing on the band-gap opening arising from the interlayer coupling effect is also analyzed. The band-gap enhancement supports the widely proposed promise of GBN heterostructure in design of high-performance optoelectronic devices such as field-effect transistors for potential applications.

Band Gap Modulation by Two-Dimensional h-BN Nanostructure

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Strain-tunable band gap in graphene/h-BN hetero-bilayer

Carbon-Based Band Gap Engineering in the h-BN Analytical Modeling

Tunable Electronic Structure and Properties of h-BN Nanomaterials Under Elastic Strain

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns.

Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride

Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Modulation of Electronic Properties of Hexagonal Boron Nitride Bilayers by an Electric Field: A First Principles Study

BN-embedded monolayer graphene with tunable electronic and topological properties

Band Gap Modification of Single-Walled Carbon Nanotube and Boron Nitride Nanotube under a Transverse Electric Field

Why the Band Gap of Graphene is Tunable on Hexagonal Boron Nitride

Strain induced tunable band gap and optical properties of graphene on hexagonal boron nitride

Electrically tunable bandgaps for g-ZnO/ZnX (X = S, Se, Te) 2D semiconductor bilayers

Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Band gap engineering of monolayer ZrGeTe<sub>4</sub> via strain: A first-principles study

Effect of Hexagonal Boron Nitride on Energy Band Gap of Graphene Antidot Structures

Proposal of graphene band-gap enhancement via heterostructure of graphene with boron nitride in vertical stacking scheme