Abstract:In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications. We systematically investigate the electronic and optical properties of graphene/hBN under the application of strain, considering various stacking geometries within the framework of density-functional theory. The semimetallic graphene layer upon aligning on the insulating hexagonal boron nitride sheet opens a few tens of meV band gap at the Dirac point due to the induced on-site energy differences on the two sublattices of graphene. Here, we demonstrate that by simultaneously tuning the interlayer distance and lattice constant, this band gap can be significantly increased to 1 eV. Interestingly, in both scenarios (small and large band gaps), the material undergoes a transition from a semiconductor to a semimetallic state. Importantly, the tunability of this band gap is strongly influenced by the specific stacking configuration. We further explored the optical properties across a broad spectrum, revealing that the presence of a strain-induced band gap fundamentally alters how light interacts with the system.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to regulate the band gap and optical properties of the graphene/hexagonal boron nitride (graphene/hBN) two - dimensional heterostructure through strain engineering, so that it can be used as a wide - range light absorber and is of great significance in the field of optoelectronic devices. Specifically, the research aims to: 1. **Explore the electronic and optical properties of the graphene/hBN heterostructure under different stacking geometries**: The changes in the electronic and optical properties of the graphene/hBN heterostructure under the application of strain were systematically studied by density functional theory (DFT). 2. **Reveal the influence of strain on the band gap**: The study found that by simultaneously adjusting the inter - layer distance and the lattice constant, the band gap of graphene can be significantly increased from tens of meV to 1 eV. In addition, the material undergoes a transition from a semiconductor to a semi - metallic state in both small - band - gap and large - band - gap cases, and this tunability of the band gap strongly depends on the specific stacking configuration. 3. **Explore the influence of strain on the optical properties**: The research shows that the strain - induced band gap fundamentally changes the way light interacts with the system. By calculating the dielectric constant (including its real and imaginary parts) and the electron energy loss, the researchers demonstrated how strain changes the optical response of the material. ### Specific problem description - **Background and motivation**: - Graphene is a zero - band - gap semi - metal, while hBN is a wide - band - gap insulator. Placing graphene on an hBN substrate can open a small band gap near the Dirac point by breaking the sub - lattice symmetry of carbon atoms. - Strain engineering provides a method to introduce a band gap without destroying the physical properties of graphene, which is crucial for the development of graphene - based devices. - **Research objectives**: - Explore the influence of strain on the electronic and optical properties of the graphene/hBN heterostructure, especially the changes in these properties under different stacking geometries. - Verify whether effective regulation of the band gap can be achieved through strain regulation, thereby achieving the transition from a semiconductor to a semi - metallic state. - Analyze the specific influence of strain on the optical properties of the material, especially the changes in light absorption and dielectric response. ### Conclusion Through this research, the authors demonstrated the great potential of strain engineering in regulating the band gap and optical properties of the graphene/hBN heterostructure, providing new ideas and methods for the design of future optoelectronic devices.

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