Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

Tuning Optical Conductivity of Large-Scale CVD Graphene by Strain Engineering

Large Tunable Optical Absorption of CVD Graphene under Total Internal Reflection by Strain Engineering.

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

High-Harmonic Generation from Engineered Graphene for Polarization Tailoring

Tuning the Graphene Work Function by Uniaxial Strain

Strain effect on the optical conductivity of graphene

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Optical Strain Engineering Enables Dynamic Spatial Control of 2D Nanomaterial Properties

Optical Separation of Mechanical Strain from Charge Doping in Graphene

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Mechanical Modulation of A Hybrid Graphene-Microfiber Structure

Many-Electron Effects on Optical Absorption Spectra of Strained Graphene

Tailoring mechanically-tunable strain fields in graphene

Optical Hall effect in strained graphene

Nano-scale strain engineering of graphene and graphene-based devices

Periodic modification of graphene via strain-induced localized reaction

Strain induced tunable band gap and optical properties of graphene on hexagonal boron nitride

Strain effects on optical properties of linearly polarized resonant modes in the presence of monolayer graphene

Graphene: Graphene Nanoribbons under Mechanical Strain (adv. Mater. 2/2015)

Noncontacting Optostriction Driven Anisotropic and Inhomogeneous Strain in Two-Dimensional Materials

Electronic Properties of Polycrystalline Graphene under Large Local Strain