Strain-tunable energy band parameters of graphene-like GaN

Harihar Behera,Gautam Mukhopadhyay

DOI: https://doi.org/10.48550/arXiv.1504.04672

2015-04-27

Abstract:We present ab initio calculations on the effect of in-plane equi-biaxial strain on the structural and electronic properties of hypothetical graphene-like GaN monolayer (ML-GaN). It was found that ML-GaN got buckled for compressive strain in excess of 7.281 %; buckling parameter increased quadratic-ally with compressive strain. The 2D bulk modulus of ML-GaN was found to be smaller than that of graphene and graphene-like ML-BN, which reflects weaker bond in ML-GaN. More importantly, the band gap and effective masses of charge carriers in ML-GaN were found to be tunable by application of in-plane equi-biaxial strain. In particular, when compressive biaxial strain of about 3 % was reached, a transition from indirect to direct band gap-phase occurred with significant change in the value and nature of effective masses of charge carriers; buckling and tensile strain reduced the band gap - the band gap reduced to 50 % of its unstrained value at 6.36 % tensile strain and to 0 eV at an extrapolated tensile strain of 12.72 %, which is well within its predicted ultimate tensile strain limit of 16 %. These predictions of strain-engineered electronic properties of highly strain sensitive ML-GaN may be exploited in future for potential applications in strain sensors and other nano-devices such as the nano-electromechanical systems (NEMS).

Materials Science,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to modulate the structural and electronic properties of monolayer gallium nitride (ML - GaN) with a graphene - like structure by applying equal biaxial strain in the plane. Specifically, the research focuses on the following aspects:

1. **Structural stability**: The structural stability of ML - GaN under different strain conditions was explored. In particular, when the compressive strain exceeds 7.281%, the ML - GaN begins to show a buckling phenomenon, and the variation law of the buckling parameters with the compressive strain was analyzed.

2. **Band structure**: The influence of strain on the band structure of ML - GaN was studied. In particular, the transition from an indirect bandgap to a direct bandgap under a compressive strain of about 3% was investigated, and the influence of this transition on the effective mass of carriers was analyzed.

3. **Elastic modulus**: The two - dimensional bulk modulus (2D bulk modulus) of ML - GaN was calculated and compared with graphene and monolayer boron nitride (ML - BN) with a graphene - like structure. It was found that the bonding in ML - GaN is weaker and its elastic modulus is also smaller.

4. **Application potential of strain engineering**: The paper predicts that the bandgap and the effective mass of carriers in ML - GaN can be significantly modulated through strain engineering. These properties make it possible to be applied in strain sensors, nano - electromechanical systems (NEMS) and other nano - devices in the future.

In summary, the main objective of this paper is to reveal the influence of strain on the structure and electronic properties of ML - GaN through theoretical calculations and simulations, and to provide a theoretical basis for the design of new devices based on ML - GaN in the future.