Abstract:The band structures of strained graphene nanoribbons (GNRs) are examined by a tight binding Hamiltonian that is directly related to the type and strength of strains. Compared to the two-dimensional graphene whose band gap remains close to zero even if a large strain is applied, the band gap of graphene nanoribbon (GNR) is sensitive to both uniaxial and shears strains. The effect of strain on the electronic structure of a GNR strongly depends on its edge shape and structural indices. For an armchair GNR, uniaxial weak strain changes the band gap in a linear fashion, and for a large strain, it results in periodic oscillation of the band gap. On the other hand, shear strain always tend to reduce the band gap. For a zigzag GNR, the effect of strain is to change the spin polarization at the edges of GNR, thereby modulate the band gap. A simple analytical model is proposed to interpret the band gap responds to strain in armchair GNR, which agrees with the numerical results.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the influence of strain (including uniaxial strain and shear strain) on the band gap of graphene nanoribbons (GNRs). Specifically, the author directly correlates the strain type and intensity through the tight - binding Hamiltonian model and systematically explores the influence of different types of strain on the band gaps of GNRs with different edge shapes (armchair - type and zigzag - type). Compared with two - dimensional graphene, the band gap of GNRs is more sensitive to strain, and this influence strongly depends on its edge shape and structural index. ### Main problem summary: 1. **Influence of strain on the band gap of graphene nanoribbons**: - The paper aims to understand how uniaxial strain and shear strain change the band gap of GNRs. - Through theoretical models and numerical simulations, reveal the specific influence mechanism of strain on the band gap. 2. **Role of edge shape and structural index**: - Armchair - type GNRs (AGNRs) and zigzag - type GNRs (ZGNRs) behave differently under strain. - The response of the band gap of AGNRs to strain depends on its structural index (such as \( n + 1=3q, 3q + 1, 3q+2 \)), while the band gap of ZGNRs is mainly affected by edge spin polarization. 3. **Understanding of physical mechanisms**: - An analytical model is proposed to explain the response of the band gap of AGNRs to strain. - For ZGNRs, the change in the band gap is explained by analyzing the change in edge spin polarization. ### Specific problems: - **Band gap change of AGNRs**: - Under weak uniaxial strain, the band gap changes linearly; under large strain, the band gap exhibits periodic oscillation. - Shear strain always reduces the band gap. - **Band gap change of ZGNRs**: - Uniaxial strain changes the edge spin polarization, thereby modulating the band gap. - Tensile strain increases the band gap, and compressive strain reduces the band gap. - Shear strain always reduces the band gap. ### Goals: - Provide explicit relationships so that people can simply and in detail understand the influence of strain on the band gap of GNRs. - Provide a theoretical basis for regulating the electronic properties of GNRs, thereby achieving performance optimization of these materials. Through these studies, the author hopes to provide theoretical support for future applications of graphene nanoribbons, especially in using strain engineering to regulate the electronic properties of materials in electronic device design.

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