Abstract:Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C$_{2x}$B$_{1-x}$N$_{1-x}$ alloys via both compositional and configurational modification. We start from the BN end-member, which already has a large bandgap, and then show that (a) the bandgap can in principle be reduced to about 2 eV with moderate substitution of C $(x<0.25)$; and (b) the electronic structure of C$_{2x}$B$_{1-x}$N$_{1-x}$ can be further tuned not only with composition $x$, but also with the configuration adopted by C substituents in the BN matrix. Our analysis, based on accurate screened hybrid functional calculations, provides a clear understanding of the correlation found between the bandgap and the level of aggregation of C atoms: the bandgap decreases most when the C atoms are maximally isolated, and increases with aggregation of C atoms due to the formation of bonding and anti-bonding bands associated with hybridization of occupied and empty defect states. We determine the location of valence and conduction band edges relative to vacuum and discuss the implications on the potential use of 2D C$_{2x}$B$_{1-x}$N$_{1-x}$ alloys in photocatalytic applications. Finally, we assess the thermodynamic limitations on the formation of these alloys using a cluster expansion model derived from first-principles.

Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride

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Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride.

Large scale growth and characterization of atomic hexagonal boron nitride layers.

From Highly Purified Boron Nitride to Boron Nitride‐Based Heterostructures: an Inorganic Precursor‐Based Strategy

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

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Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Carbon-Based Band Gap Engineering in the h-BN Analytical Modeling

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains

Bandgap Tuning of C3N Monolayer: A First-Principles Study

Direct band-gap crossover in epitaxial monolayer boron nitride

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Why the Band Gap of Graphene is Tunable on Hexagonal Boron Nitride

Ternary B–C–N compounds layered materials with regulated electronic properties and ultrawide bandgaps

Band Gap Modulation by Two-Dimensional h-BN Nanostructure

Toward Single-Layer Uniform Hexagonal Boron Nitride-Graphene Patchworks with Zigzag Linking Edges.

Strain-tunable band gap in graphene/h-BN hetero-bilayer

Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation