Abstract:Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains morphology, and hindering its usefulness in integrated nano-devices. Here, ultra-wide bandgap h-BN thin films are grown directly on low-miscut atomically smooth highly insulating c-plane sapphire substrates (without using any metal catalytic layer) by pulsed laser deposition, showing remarkable unidirectional triangular-shape domains morphology. This unidirectional domain growth is attributed to the step-edge guided nucleation caused by reducing the film-substrate interfacial symmetry and energy, thereby breaking the degeneracy of nucleation sites of random domains, as revealed by the density functional theory (DFT) calculations. Through extensive characterizations, we further demonstrate the excellent single crystal-like functional properties of films. Our findings might pave the way for feasible large-area direct growth of electronic-quality h-BN thin films on insulating substrates for high-performance 2D-electronics, and in addition would be beneficial for hetero engineering of 2D-vdW materials with emergent phenomena.

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils.

Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Towards the growth of single-crystal boron nitride monolayer on Cu

Unidirectional domain growth of hexagonal boron nitride thin films

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

A Review of Scalable Hexagonal Boron Nitride (h‐BN) Synthesis for Present and Future Applications

Comprehensive characterization and analysis of hexagonal boron nitride on sapphire

Hexagonal Boron Nitride on III-V Compounds: A Review of the Synthesis and Applications