Abstract:Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains morphology, and hindering its usefulness in integrated nano-devices. Here, ultra-wide bandgap h-BN thin films are grown directly on low-miscut atomically smooth highly insulating c-plane sapphire substrates (without using any metal catalytic layer) by pulsed laser deposition, showing remarkable unidirectional triangular-shape domains morphology. This unidirectional domain growth is attributed to the step-edge guided nucleation caused by reducing the film-substrate interfacial symmetry and energy, thereby breaking the degeneracy of nucleation sites of random domains, as revealed by the density functional theory (DFT) calculations. Through extensive characterizations, we further demonstrate the excellent single crystal-like functional properties of films. Our findings might pave the way for feasible large-area direct growth of electronic-quality h-BN thin films on insulating substrates for high-performance 2D-electronics, and in addition would be beneficial for hetero engineering of 2D-vdW materials with emergent phenomena.

Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy

Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Unidirectional domain growth of hexagonal boron nitride thin films

Large Elastic Deformation and Defect Tolerance of Hexagonal Boron Nitride Monolayers

Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition

In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains

A peeling approach for integrated manufacturing of large mono-layer h-BN crystals

Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate

Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys