Abstract:The electronic structures of carbon (C) and boron nitride (BN) nanotubes under a transverse electric field were investigated through the first-principles pseudopotential density-functional theory (DFT) calculations. It was found that band gap modifications occur both in the semiconducting C and BN nanotubes under an external electric field by inducing a semiconductor–metal transition. The variations of the band gap sizes with transverse electric fields are very different between C and BN nanotubes. In the semiconducting C nanotube, a sharp semiconductor–metal transition does not occur until a threshold electric field is achieved; the BN nanotube, on the other hand, shows a gradual reduction of the band gap size once an external electric field is applied due to the larger ionicity of BN bonds. In addition, the semiconductor–metal transition in both C and BN nanotubes occurs at a lower value of electric field with increasing diameter. The ability to tune the band gap in both C and BN nanotubes by an external electric field provides the possibility for future electronic and electro-optic nanodevice applications.

Band Gap Modification of Single-Walled Carbon Nanotube and Boron Nitride Nanotube under a Transverse Electric Field

Electronic and Optical Properties of Single-Walled Carbon Nanotubes under A Uniform Transverse Electric Field: A First-Principles Study

Engineering the band gap of BN and BC2N nanotubes based on T-graphene sheets using a transverse electric field: Density functional theory study

Carbon nanotubes with atomic impurities on boron nitride sheets under applied electric fields

Scaling Law of the Giant Stark Effect in Boron Nitride Nanoribbons and Nanotubes

The Excitonic Effects In Single And Double-Walled Boron Nitride Nanotubes

Electronic Structures of Defective Boron Nitride Nanotubes under Transverse Electric Fields

Electronic structures of defective BN nanotubes under transverse electric fields

First principle study on the transition of electronic, mechanic and piezoelectric property of hexagonal Boron Nitride nanotube

Electronic structures of organic molecule encapsulated BN nanotubes under transverse electric field

Transverse field-induced effects in carbon nanotubes

Narrowed Bandgaps and Stronger Excitonic Effects from Small Boron Nitride Nanotubes

Estimation of the Band Gap of Carbon Nanotube Bundles

Enhanced Electron Field Emission in B-doped Carbon Nanotubes

Electronic Properties of Boron Nanotubes with Axial Strain

Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers

First-Principles Study of Band-Gap Change in Deformed Nanotubes

Constraints of mixing matrix elements in the sequential fourthgeneration model

Band Gap Modulation by Two-Dimensional h-BN Nanostructure

Boron Nitride and Carbon Double-Wall Hetero-Nanotubes: First-Principles Calculation of Electronic Properties

Tunable Electronic Properties of ZnO Nanowires and Nanotubes under a Transverse Electric Field