Boron Nitride and Carbon Double-Wall Hetero-Nanotubes: First-Principles Calculation of Electronic Properties

Hui Pan,Yuan Ping Feng,Jianyi Lin
DOI: https://doi.org/10.1088/0957-4484/19/9/095707
IF: 3.5
2008-01-01
Nanotechnology
Abstract:First- principles calculations based on density functional theory with the generalized gradient approximation were carried out to investigate the electronic properties of boron nitride and carbon double- wall hetero- nanotubes of different chirality and size. The results show that the electronic structures of the double- wall hetero- nanotubes near the Fermi level are dominated by the p electrons of carbon atoms, regardless of whether the carbon nanotube is inside or outside the boron nitride nanotube. Double- wall hetero- nanotubes consisting of semiconducting carbon and boron nitride nanotubes are semiconductors. An opening of a band gap is observed for armchair carbon and boron nitride double- wall hetero- nanotubes with small intertube spacing due to the intertube interaction and the changes of symmetry.
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