Abstract:The doping of graphene to tune its electronic properties is essential for its further use in carbon-based electronics. Adapting strategies from classical silicon-based semiconductor technology, we use the incorporation of heteroatoms in the 2D graphene network as a straightforward way to achieve this goal. Here, we report on the synthesis of boron-doped graphene on Ni(111) in a chemical vapor deposition process of triethylborane on the one hand and by segregation of boron from the bulk of the substrate crystal on the other hand. The chemical environment of boron was determined by x-ray photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy was used to analyze the impact on the band structure. Doping with boron leads to a shift of the graphene bands to lower binding energies. The shift depends on the doping concentration and for a doping level of 0.3 ML a shift of up to 1.2 eV is observed. The experimental results are in agreement with density-functional calculations. Furthermore, our calculations suggest that doping with boron leads to graphene preferentially adsorbed in the top-fcc geometry, since the boron atoms in the graphene lattice are then adsorbed at substrate fcc-hollow sites. The smaller distance of boron atoms incorporated into graphene compared to graphene carbon atoms leads to a bending of the doped graphene sheet in the vicinity of the boron atoms. By comparing calculations of doped and undoped graphene on Ni(111), as well as the respective freestanding cases, we are able to distinguish between the effects that doping and adsorption have on the band structure of graphene. Both doping and bonding to the surface result in opposing shifts on the graphene bands.

Band structure of boron doped carbon nanotubes

Structural systematics in boron-doped single wall carbon nanotubes

Stochastic Heterostructures in B/N-Doped Carbon Nanotubes

Enhanced Electron Field Emission in B-doped Carbon Nanotubes

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Boron and carbon in two-dimensional nitrogene structures: Heterodoping, doping, and chemical functionalization

The Excitonic Effects In Single And Double-Walled Boron Nitride Nanotubes

Continuum Modeling of Boron Nitride Nanotubes

Magnetism in BN Nanotubes Induced by Carbon Doping

Boron Nitride and Carbon Double-Wall Hetero-Nanotubes: First-Principles Calculation of Electronic Properties

Emission properties of boron and nitrogen doped ultrashort carbon nanotubes

Band Structures of TiO 2 Doped with N, C and B

Pressure-Induced Boron Nitride Nanotube Derivatives: 3d Metastable Allotropes

Carbon Doping Effects on the Electronic Structure of Boron Nitride

Growth and electronic structure of boron-doped graphene

Structural and electronic properties of fluorinated boron nitride nanotubes.

Special electronic structures and quantum conduction of B/P co-doping carbon nanotubes under electric field using the first principle

Tuning the magnetic and transport properties of boron-nitride nanotubes via oxygen-doping

Electronic-Structures of Doped Fullerenes with Boron and Nitrogen-Atoms

A New Class of Boron Nanotube

Magnetism in BN nanotubes induced by Carbon Substitution