Abstract:Carbon nanotubes are one-dimensional and very narrow. These obvious facts imply that under doping with boron and nitrogen, microscopic doping inhomogeneity is much more important than for bulk semiconductors. We consider the possibility of exploiting such fluctuations to create interesting devices. Using self-consistent tight-binding (SCTB), we study heavily doped highly compensated nanotubes, revealing the spontaneous formation of structures resembling chains of random quantum dots, or nano-scale diode-like elements in series. We also consider truly isolated impurities, revealing simple scaling properties of bound state sizes and energies.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to use the microscopic doping inhomogeneity in boron - and nitrogen - doped carbon nanotubes to create interesting nano - electronic devices. Specifically, the authors focus on the spontaneously formed structures in highly doped and highly compensated carbon nanotubes, which are similar to random quantum dot chains or diode elements in series on the nanoscale. ### Problem Background Carbon nanotubes (CNTs) have excellent intrinsic transport properties, giving them great potential in nano - electronic applications. However, useful in - tube devices usually require electronic heterogeneity. Current methods to achieve this heterogeneity include: 1. **Electron - beam lithography**: Apply the desired heterogeneity on a larger scale (e.g., gate contacts, masked potassium doping). 2. **Utilize pre - existing inhomogeneities**: Such as in - tube defects, accidental placement of external nanoparticles, or tube - to - tube crossings. ### Research Motivation A potential method to achieve stable small - scale electronic property heterogeneity is through substitutional doping of boron and nitrogen. Although this doping has been achieved by various techniques, the spatial variation of the doping density is more important in 1D nanotubes than in bulk semiconductors. The fluctuations are large and electrons cannot bypass abnormal regions. Usually, these fluctuations are considered troublesome or even worse. The question raised by the authors is: Can these fluctuations be utilized? ### Research Method To study this problem, the authors used the self - consistent tight - binding (SCTB) method to study highly doped (about 1 atomic %) and highly compensated nanotubes. They found that such nanotubes can spontaneously form structures similar to random quantum dot chains or nanoscale diode elements in series. In addition, they also studied truly isolated impurities, revealing the simple scaling properties of the bound - state size and energy. ### Key Formulas 1. **Estimation of potential fluctuation**: \[ \Delta V\approx\frac{9\text{ eV}\cdot c^{1/2}}{\tilde{\epsilon}} \] where \(c\) is the proportion of doping atoms and \(\tilde{\epsilon}\) is the dielectric constant. 2. **Empirical formulas for bound - state energy and axial expansion**: \[ \frac{E}{E_{\text{gap}}}\approx - 2.65\left(\frac{Z}{\tilde{\epsilon}}\right)^{1.25} \] \[ \langle\left(\frac{z}{R}\right)^2\rangle\approx1.2\left(\frac{Z}{\tilde{\epsilon}}\right)^{-1.05} \] ### Main Conclusions - At a high doping level, fluctuations spontaneously generate high - density nonlinear nanoscale quantum dots and/or junction structures, which are relatively insensitive to environmental perturbations (such as being packed into nanotube bundles). - These results also apply to chemisorbed dopants. - The one - dimensional property makes doping variations especially relevant to electronic characteristics, and also facilitates mapping and manipulation, for example, by scanning tunneling microscopy. By using fluctuations in this way, nonlinear device characteristics can be generated on a scale much smaller than that of intentional manufacturing, and the fine - grained need for doping control can be avoided.

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