Abstract:Density functional theory was utilized to study the electronic properties of boron nitride (BN) sheets, taking into account the presence of defects. The structure considered consisted of a central hexagon surrounded by alternating pentagons (three) and heptagons (three). The isocoronene cluster model with an armchair edge was used with three different chemical compositions. In the first structure, three B–B bonds were formed where one B in the dimer was part of the central hexagon. In the second structure, three N–N–N bonds were formed at the periphery of the cluster, around the central hexagon. In the third structure, three N–N bonds were formed in a similar fashion to the first model. Our results indicated that the third structure was the most stable configuration; this exhibited planar geometry, semiconductor behavior, and ionic character. To explore the effects of doping, we replaced B and N atoms with C atoms, considering different atomic positions in the central hexagon. When an N atom was replaced with a C atom, the new structure was a semiconductor, but when a B atom was replaced with a C atom, the new structure was a semimetal. At the same time, the polarity increased, inducing covalent behavior. Replacing two N atoms with two C atoms also resulted in a semiconductor, while replacing two B atoms with two C atoms yielded a semimetal; in both cases the bonding was covalent. When three B (three N) atoms of the central hexagon were replaced with three C atoms, the new structure exhibited a transition to a conductor (remained a semiconductor) with low polarity. When monovacancies (N) and divacancies (B and N) were inserted into the lattice, the system was transformed into a covalent semiconductor. Finally, the electrostatic potential surface was calculated in order to explore intermolecular properties such as the charge distribution, which showed how the reactivity of the boron nitride sheets was affected by doping and orbital hybridization.

Formation, morphology, and effect of complex defects in boron nitride nanotubes: An ab initio calculation

Ab Initio Investigation about the Possibility of Ferromagnetism Induced by Boron Vacancy in BN Nanotubes

Influence of point defects on the electronic properties of boron nitride nanosheets

Substitutional carbon doping of free-standing and Ru-supported BN sheets: A first-principles study.

Effect of substitutional and vacancy defects on the electrical and mechanical properties of 2D-hexagonal boron nitride

Carbon and vacancy centers in hexagonal boron nitride

Antisite Atom Segregation in Porous Boron Nitride Nanotubes: Formation Mechanism and Characterization

Electronic Structures of Defective Boron Nitride Nanotubes under Transverse Electric Fields

Deformation and Bifurcation Analysis of Boron-Nitride Nanotubes

Electronic properties of single vacancy defect in boron nitride nanoribbons with edge perturbation

Mechanical properties of boron nitride sheet with randomly distributed vacancy defects

Thermodynamics of carbon point defects in hexagonal boron nitride

Magnetism of C adatoms on BN nanostructures: implications for functional nanodevices.

Carbon Doping Effects on the Electronic Structure of Boron Nitride

Engineering Boron Vacancy Defects in Boron Nitride Nanotubes

Electronic structures of defective BN nanotubes under transverse electric fields

Defects-Enhanced Dissociation of H-2 on Boron Nitride Nanotubes

Effects of atomic vacancy defects and their evolution mechanisms on the fracture of carbon nanotubes

First-Principles Study of Defected Single Layer Hexagonal Boron-Nitride (h-BN)

Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities

Formation, Structure, Electronic, and Transport Properties of Nitrogen Defects in Graphene and Carbon Nanotubes