Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities

Z. Qiu,K. Vaklinova,P. Huang,M. Grzeszczyk,H. Yang,K. Watanabe,T. Taniguchi,K. S. Novoselov,J. Lu,M. Koperski

2024-03-18

Abstract:Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic mid-gap states to the well-established photoluminescence response (including single photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: 1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM, and 2) multi-site defect complexes exhibiting a ladder of empty and occupied mid-gap states characterized by distinct spatial geometries. Combining direct probing of mid-gap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.

Materials Science

What problem does this paper attempt to address?

This paper aims to solve the problems of atomic and electronic structures of defect centers in two - dimensional materials, especially the single - defect function enhancement in carbon - doped hexagonal boron nitride (hBN:C). Specifically, the paper attempts to directly examine the defects in thin - layer carbon - doped hexagonal boron nitride (hBN:C) through scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to reveal the characteristics of these defects at the atomic and electronic levels, so as to understand how they affect the functionality of materials, such as quantum dots, single - photon sources, magnetic field probes and pressure sensors.

### Main objectives of the paper:

1. **Direct observation of defect structures**: Use STM technology to directly observe the atomic structure of defects in hBN:C, which helps to understand the specific morphology and position of defects on the material surface.
2. **Analysis of the electronic structure of defects**: Study the electronic energy level structure of defects, especially the mid - gap states, through STS technology, which is crucial for understanding the functionality of defects.
3. **Combination with optical response**: Combine the experimental results of STM and STS with photoluminescence (PL) spectra to comprehensively understand the optical properties of defects and their application potential in quantum technology.
4. **Exploration of multi - defect complexes**: Identify and characterize multi - defect complexes, which may have multiple mid - gap states and be coupled with vibration modes to form complex electronic structures.
5. **Combination of theory and experiment**: Verify the experimental results through density functional theory (DFT) calculations, explain the formation energy and electronic structure of defects, and further support the experimental observations.

### Main findings:

- **Single - point defects**: Two main types of single - point defects were discovered:
- **Donor - like states**: They are manifested as atomic - resolution structures observable in STM. These defects appear as protrusions under positive bias and as depressions under negative bias.
- **Multi - point defect complexes**: They exhibit a series of empty and occupied mid - gap states and have unique spatial geometric structures.
- **Electron - phonon coupling**: The resonances observed by STS are not limited to the mid - gap defect states, but also involve phonon emission processes, forming multiple equally - spaced resonance peaks.
- **Single - photon emission**: Studies have shown that certain defects (such as CB+ and VN+) may produce single - photon emission through multi - body internal defect transitions, which provides a theoretical basis for the development of hBN - based single - photon sources.

### Conclusion:

By combining STM, STS and optical spectroscopy techniques, researchers can characterize in detail the atomic and electronic structures of defects in hBN:C, revealing the potential applications of these defects in quantum technology. Future research directions may focus on the development of scanning tunneling luminescence technology to achieve local electrical excitation of single - photon sources. This work not only shows the potential of hBN:C as a platform for quantum defect engineering, but also lays the foundation for the development of atomic - scale optoelectronic technology.