Abstract:Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic mid-gap states to the well-established photoluminescence response (including single photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: 1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM, and 2) multi-site defect complexes exhibiting a ladder of empty and occupied mid-gap states characterized by distinct spatial geometries. Combining direct probing of mid-gap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.

Atomic and Electronic Structure of Defects in hBN: Enhancing Single-Defect Functionalities

Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride.

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy

Dielectric environment sensitivity of carbon centres in hexagonal boron nitride

Carbon and vacancy centers in hexagonal boron nitride

The hBN defects database: a theoretical compilation of color centers in hexagonal boron nitride

Atomic-scale imaging and spectroscopy of defects in low-dimensional materials

Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride

Single nuclear spin detection and control in a van der Waals material

Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping

Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences

Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride

First-principles Engineering of Charged Defects for Two-dimensional Quantum Technologies

Identification of defects responsible for optically detected magnetic resonance in hexagonal boron nitride

Spin-active Defects in Hexagonal Boron Nitride

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions

Optically addressable spin defects coupled to bound states in the continuum metasurfaces