Abstract:CONSPECTUS: While some exceptional properties are unique to graphene only (its signature Dirac-cone gapless dispersion, carrier mobility, record strength), other features are common to other two-dimensional materials. The broader family "beyond graphene" offers greater choices to be explored and tailored for various applications. Transition metal dichalcogenides (TMDCs), hexagonal boron nitride (h-BN), and 2D layers of pure elements, like phosphorus or boron, can complement or even surpass graphene in many ways and uses, ranging from electronics and optoelectronics to catalysis and energy storage. Their availability greatly relies on chemical vapor deposition growth of large samples, which are highly polycrystalline and include interfaces such as edges, heterostructures, and grain boundaries, as well as dislocations and point defects. These imperfections do not always degrade the material properties, but they often bring new physics and even useful functionality. It turns particularly interesting in combination with the sheer openness of all 2D sheets, fully exposed to the environment, which, as we show herein, can change and tune the defect structures and consequently all their qualities, from electronic levels, conductivity, magnetism, and optics to structural mobility of dislocations and catalytic activities. In this Account, we review our progress in understanding of various defects. We begin by expressing the energy of an arbitrary graphene edge analytically, so that the environment is regarded by "chemical phase shift". This has profound implications for graphene and carbon nanotube growth. Generalization of this equation to heteroelemental BN gives a method to determine the energy for arbitrary edges of BN, depending on the partial chemical potentials. This facilitates the tuning of the morphology and electronic and magnetic properties of pure BN or hybrid BN|C systems. Applying a similar method to three-atomic-layer TMDCs reveals more diverse edge structures for thermodynamically stable flakes. Moreover, CVD samples show new types of edge reconstruction, providing insight into the nonequilibrium growth process. Combining dislocation theory with first-principles computations, we could predict the dislocation cores for BN and TMDC and reveal their variable chemical makeup. This lays the foundation for the unique sensitivity to ambient conditions. For example, partial occupation of the defect states for dislocations in TMDCs renders them intrinsically magnetic. The exchange coupling between electrons from neighboring dislocations in grain boundaries further makes them half-metallic, which may find its applications in spintronics. Finally, brief discussion of monoelemental 2D-layer phosphorus and especially the structures and growth routes of 2D boron shows how theoretical assessment can help the quest for new synthetic routes.

Atomic-scale imaging and spectroscopy of defects in low-dimensional materials

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride.

Atomic and Electronic Structure of Defects in hBN: Enhancing Single-Defect Functionalities

Identification of active atomic defects in a monolayered tungsten disulphide nanoribbon

In Situ Structural Dynamics of Atomic Defects in Tungsten Oxide

Atomic Resolution Imaging Of Grain Boundary Defects In Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride

Atomic Defect Quantification by Lateral Force Microscopy

Visualizing Atomic Quantum Defects in Ultrathin 1T-PtTe 2

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy

Ultrafast atomic-scale scanning tunnelling spectroscopy of a single vacancy in a monolayer crystal

Probing defectivity beneath the hydrocarbon blanket in 2D hBN using TEM-EELS

Imaging of Optically Active Defects with Nanometer Resolution

Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS2 : Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding

Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors

An open canvas--2D materials with defects, disorder, and functionality

Probing a Defect-Site-Specific Electronic Orbital in Graphene with Single-Atom Sensitivity

Wide-field spectral super-resolution mapping of optically active defects in hBN

Atom-resolved Imaging of Ordered Defect Superstructures at Individual Grain Boundaries

Direct visualization of defect-controlled diffusion in van der Waals gaps