Abstract:Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic mid-gap states to the well-established photoluminescence response (including single photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: 1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM, and 2) multi-site defect complexes exhibiting a ladder of empty and occupied mid-gap states characterized by distinct spatial geometries. Combining direct probing of mid-gap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.

Probing a Defect-Site-Specific Electronic Orbital in Graphene with Single-Atom Sensitivity

Atomic Defects in Two‐Dimensional Materials: from Single‐Atom Spectroscopy to Functionalities in Opto‐/Electronics, Nanomagnetism, and Catalysis

Single-atom vibrational spectroscopy with chemical-bonding sensitivity

Space- and Angle-Resolved Vibrational Spectroscopy to Probe the Local Phonon Modes at Planar Defects

Projective Quasiparticle Interference of a Single Scatterer to Analyze the Electronic Band Structure of ZrSiS

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities

Quantum spin probe of single charge dynamics

Probing the charged defects in single-layer WS2 at atomic level

Atomic-scale imaging and spectroscopy of defects in low-dimensional materials

Atomic Defect Quantification by Lateral Force Microscopy

Probing the Evolution of the Electron Spin Wave Function of the Nitrogen-Vacancy Center in Diamond via Pressure Tuning

Single-Ion Spectroscopy of h-BN Point Defect Fluorescence in Liquid Environments

Probing the edge-related properties of atomically thin MoS2 at nanoscale

Photoelectronic scoping of adatoms, atomic vacancies, and the outermost layer of a surface

Atomic-scale characterization of defects in oxygen plasma-treated graphene by scanning tunneling microscopy

Visualizing Atomic Quantum Defects in Ultrathin 1T-PtTe 2

A substitutional quantum defect in WS$_2$ discovered by high-throughput computational screening and fabricated by site-selective STM manipulation

Ultrafast atomic-scale scanning tunnelling spectroscopy of a single vacancy in a monolayer crystal

Simulations of angle- and spatially-resolved vibrational electron energy loss spectroscopy for a system with a planar defect