Projective Quasiparticle Interference of a Single Scatterer to Analyze the Electronic Band Structure of ZrSiS

Wenhao Zhang,Kunliang Bu,Fangzhou Ai,Zongxiu Wu,Ying Fei,Yuan Zheng,Jianhua Du,Minghu Fang,Yi Yin
DOI: https://doi.org/10.1103/physrevresearch.2.023419
2020-01-01
Physical Review Research
Abstract:Quasiparticle interference (QPI) of the electronic states has been widely applied in scanning tunneling microscopy to analyze the electronic band structure of materials. Single-defect-induced QPI reveals defect-dependent interaction between a single atomic defect and electronic states, which deserves special attention. Due to the weak signal of single-defect-induced QPI, the signal-to-noise ratio is relatively low in a standard two-dimensional QPI measurement. In this paper, we introduce a projective quasiparticle interference (PQPI) method in which a one-dimensional measurement is taken along high-symmetry directions centered on a specified defect. We apply the PQPI method to the topological nodal-line semimetal ZrSiS. We focus on two special types of atomic defects that scatter the surface and bulk electronic bands. With an enhanced signal-to-noise ratio in PQPI, the energy dispersions are clearly resolved along high-symmetry directions. We discuss the defect-dependent scattering of bulk bands with the nonsymmorphic symmetry-enforced selection rules. Furthermore, an energy shift of the surface floating band is observed, and a branch of energy dispersion (q_{6}) is resolved. This PQPI method can be applied to other complex materials to explore defect-dependent interactions in the future.
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