Abstract:Topological insulators are exotic states of matter that show quantum-Hall-like behaviour in the absence of a magnetic field. Surface states in such systems are protected against scattering and are thought to provide an avenue for the realization of fault-tolerant quantum computing. Experiments now reveal the observation of such a topological state of matter in Bi2Se3, a naturally occurring stoichiometric material with a simple surface-state structure and a bulk energy gap larger than kBT at room temperature. Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects1,2,3,4,5,6,7. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks8,9,10,11,12,13,14,15. It has been proposed that a topological insulator2 with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation14. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi2Se3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi2Se3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

Quantum oscillation and unusual protection mechanism of the surface state in nonsymmorphic semimetals

Quantum Transport of the 2D Surface State in a Nonsymmorphic Semimetal

Quasiparticle Interference and Nonsymmorphic Effect on a Floating Band Surface State of ZrSiSe

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Electron-phonon Coupling and Kohn Anomaly due to the Floating 2D Electronic Bands on the Surface of ZrSiS

Electron-phonon Coupling and Kohn Anomaly Due to Floating Two-Dimensional Electronic Bands on the Surface of ZrSiS

Quantized surface transport in topological Dirac semimetal films

Quantum Transport in a Compensated Semimetal W2As3 with Nontrivial Z2 Indices

Unconventional Surface Critical Behavior Induced by a Quantum Phase Transition from the Two-Dimensional Affleck-Kennedy-Lieb-Tasaki Phase to a Néel-Ordered Phase

High-Mobility Bi 2 Se 3 Nanoplates Manifesting Quantum Oscillations of Surface States in the Sidewalls

Anisotropic Surface State in a Topological Semimetal Candidate Ta3SiTe6

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface

Extraordinary surface critical behavior induced by symmetry-protected topological state of a two-dimensional quantum magnet

Energy gap of topological surface states in proximity to a magnetic insulator

Thermoelectric quantum oscillations in ZrSiS

Quantum Hall effect in topological Dirac semimetals modulated by the Lifshitz transition of the Fermi arc surface states

Quantum Electronics: Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS (adv. Electron. Mater. 10/2016)

Experimental Evidence of Crystal Symmetry Protection for the Topological Nodal Line Semimetal State in ZrSiS

Symmetry-selective quasiparticle scattering and electric field tunability of the ZrSiS surface electronic structure

Zeeman effect on surface electron transport in topological insulator Bi2Se3 nanoribbons

Quantum oscillations in a topological insulator Bi_{1-x}Sb_{x}