Defect-induced helicity-dependent terahertz emission in Dirac semimetal PtTe2 thin films

Zhongqiang Chen,Hongsong Qiu,Xinjuan Cheng,Jizhe Cui,Zuanming Jin,Da Tian,Xu Zhang,Kankan Xu,Ruxin Liu,Wei Niu,Liqi Zhou,Tianyu Qiu,Yequan Chen,Caihong Zhang,Xiaoxiang Xi,Fengqi Song,Rong Yu,Xuechao Zhai,Biaobing Jin,Rong Zhang,Xuefeng Wang
2024-03-01
Abstract:Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, the nonlinear optical response in centrosymmetric Dirac semimetals via the defect engineering has remained highly challenging. Here, we observe the helicity-dependent terahertz (THz) emission in Dirac semimetal PtTe2 thin films via circular photogalvanic effect (CPGE) under normal incidence. This is activated by artificially controllable out-of-plane Te-vacancy defect gradient, which is unambiguously evidenced by the electron ptychography. The defect gradient lowers the symmetry, which not only induces the band spin splitting, but also generates the giant Berry curvature dipole (BCD) responsible for the CPGE. Such BCD-induced helicity-dependent THz emission can be manipulated by the Te-vacancy defect concentration. Furthermore, temperature evolution of the THz emission features the minimum of the THz amplitude due to the carrier compensation. Our work provides a universal strategy for symmetry breaking in centrosymmetric Dirac materials for efficient nonlinear transport and facilitates the promising device applications in integrated optoelectronics and spintronics.
Materials Science,Applied Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the challenge of achieving nonlinear optical responses through defect engineering in centrosymmetric Dirac semimetal materials. Specifically, the researchers observed the helicity - dependent terahertz (THz) emission phenomenon due to the circular - polarized - light - photogalvanic effect (CPGE) in PtTe₂ thin films. This phenomenon is activated by an artificially controllable Te - vacancy - defect gradient. This defect gradient reduces the symmetry of the material, not only causing band - spin splitting but also generating a large Berry - curvature dipole (BCD), which is a key factor for CPGE. In addition, the study also explored the influence of temperature changes on THz emission and found that the THz amplitude reaches a minimum at about 120K due to the carrier - compensation effect. This work provides a general strategy for achieving effective nonlinear transport in centrosymmetric Dirac materials and promotes the development of integrated optoelectronics and spintronics applications.