Abstract:Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic mid-gap states to the well-established photoluminescence response (including single photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: 1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM, and 2) multi-site defect complexes exhibiting a ladder of empty and occupied mid-gap states characterized by distinct spatial geometries. Combining direct probing of mid-gap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.

Atomic Resolution Imaging Of Grain Boundary Defects In Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride.

Grain Boundary Motion in Two-Dimensional Hexagonal Boron Nitride.

Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments.

Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride.

In Situ Atomistic Observation of Grain Boundary Migration Subjected to Defect Interaction

Electron Knock-On Damage in Hexagonal Boron Nitride Monolayers

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Migrations of pentagon-heptagon defects in hexagonal boron nitride monolayer: the first-principles study.

Graphene/hexagonal-Bn Grain Boundary Samples

Step Flow Versus Mosaic Film Growth in Hexagonal Boron Nitride

Direct Observation of Defects in Hexagonal Boron Nitride Monolayers

Atomic-scale imaging and spectroscopy of defects in low-dimensional materials

Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping

Spin-Resolved Visible Optical Spectra and Electronic Characteristics of Defect-Mediated Hexagonal Boron Nitride Monolayer

Grain Boundary Structures and Electronic Properties of Hexagonal Boron Nitride on Cu(111)

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

Atom-resolved Imaging of Ordered Defect Superstructures at Individual Grain Boundaries

Defect-engineering hexagonal boron nitride using low-energy Ar+ irradiation

Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities