Abstract:We use conduction atomic force microscopy (CAFM) to examine the soft breakdown of monocrystalline hexagonal boron nitride (h-BN) and relate the observations to the defect generation and dielectric degradation in the h-BN by charge transport simulations and density functional theory (DFT) calculations. A modified CAFM approach is adopted, whereby 500 x 500 nm2 to 3 x 3 mu m2 sized metal/h-BN/ metal capacitors are fabricated on 7 to 19 nm-thick h-BN crystal flakes and the CAFM tip is placed on top of the capacitor as an electrical probe. Current-voltage (I-V) sweeps and time-dependent dielectric breakdown measurements indicate that defects are generated gradually over time, leading to a progressive increase in current prior to dielectric breakdown. Typical leakage currents are around 0.3 A/cm2 at a 10 MV/cm applied field. DFT calculations indicate that many types of defects could be generated and contribute to the leakage current. However, three defects created from adjacent boron and nitrogen monovacancies exhibit the lowest formation energy. These three defects form molecular bridges between two adjacent h-BN layers, which in turn "electrically shorts" the two layers at the defect location. Electrical shorting between layers is manifested in charge transport simulations, which show that the I-V data can only be correctly modeled by incorporating a decrease in effective electrical thickness of the h-BN as well as the usual increase in trap density, which, alone, cannot explain the experimental data. An alternative breakdown mechanism, namely, the physical removal of h-BN layers under soft breakdown, appears unlikely given the h-BN is mechanically confined by the electrodes and no change in AFM topography is observed after breakdown. High-resolution transmission electron microscope micrographs of the breakdown location show a highly localized (<1 nm) breakdown path extending between the two electrodes, with the h-BN layers fractured and disrupted, but not removed.

Electron Knock-On Damage in Hexagonal Boron Nitride Monolayers

Creation of single vacancies in hBN with electron irradiation

Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments.

Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement

Atomistic Description of Electron Beam Damage in Nitrogen-Doped Graphene and Single-Walled Carbon Nanotubes

Three-dimensional description of vibration-assisted electron knock-on damage

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Adatom-mediated damage of two-dimensional materials under the electron beam in a transmission electron microscope

Identification and thermal stability of point defects in neutron-irradiated hexagonal boron nitride (h-BN)

Molecular Bridges Link Monolayers of Hexagonal Boron Nitride During Dielectric Breakdown

Vacancy Growth and Migration Dynamics in Atomically Thin Hexagonal Boron Nitride under Electron Beam Irradiation

Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping

Atomistic Insights into Nucleation and Formation of Hexagonal Boron Nitride on Nickel from First-Principles-Based Reactive Molecular Dynamics Simulations

Defect-engineering hexagonal boron nitride using low-energy Ar+ irradiation

Atomic Resolution Imaging Of Grain Boundary Defects In Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride

Thermodynamics of carbon point defects in hexagonal boron nitride

Electron Paramagnetic Resonance signature of point defects in neutron irradiated hexagonal Boron Nitride

Probing the Out-of-plane Distortion of Single Point Defects in Atomically Thin Hexagonal Boron Nitride at the Picometer Scale.

Electronic excitation in graphene under single-particle irradiation

Step Flow Versus Mosaic Film Growth in Hexagonal Boron Nitride

Quantum theory of electronic excitation and sputtering by transmission electron microscopy