Abstract:Density functional theory was utilized to study the electronic properties of boron nitride (BN) sheets, taking into account the presence of defects. The structure considered consisted of a central hexagon surrounded by alternating pentagons (three) and heptagons (three). The isocoronene cluster model with an armchair edge was used with three different chemical compositions. In the first structure, three B–B bonds were formed where one B in the dimer was part of the central hexagon. In the second structure, three N–N–N bonds were formed at the periphery of the cluster, around the central hexagon. In the third structure, three N–N bonds were formed in a similar fashion to the first model. Our results indicated that the third structure was the most stable configuration; this exhibited planar geometry, semiconductor behavior, and ionic character. To explore the effects of doping, we replaced B and N atoms with C atoms, considering different atomic positions in the central hexagon. When an N atom was replaced with a C atom, the new structure was a semiconductor, but when a B atom was replaced with a C atom, the new structure was a semimetal. At the same time, the polarity increased, inducing covalent behavior. Replacing two N atoms with two C atoms also resulted in a semiconductor, while replacing two B atoms with two C atoms yielded a semimetal; in both cases the bonding was covalent. When three B (three N) atoms of the central hexagon were replaced with three C atoms, the new structure exhibited a transition to a conductor (remained a semiconductor) with low polarity. When monovacancies (N) and divacancies (B and N) were inserted into the lattice, the system was transformed into a covalent semiconductor. Finally, the electrostatic potential surface was calculated in order to explore intermolecular properties such as the charge distribution, which showed how the reactivity of the boron nitride sheets was affected by doping and orbital hybridization.

Antisite Atom Segregation in Porous Boron Nitride Nanotubes: Formation Mechanism and Characterization

From Highly Purified Boron Nitride to Boron Nitride‐Based Heterostructures: an Inorganic Precursor‐Based Strategy

Formation, morphology, and effect of complex defects in boron nitride nanotubes: An ab initio calculation

Pressure-Induced Boron Nitride Nanotube Derivatives: 3d Metastable Allotropes

Substitutional carbon doping of free-standing and Ru-supported BN sheets: A first-principles study.

Structural characterizations and electronic properties of boron nitride nanotube crystalline bundles.

Anisotropy and Transport Properties of Tubular C-BN Janus Nanostructures

Selective Adsorption of First-Row Atoms on BN Nanotubes

Stochastic Heterostructures in B/N-Doped Carbon Nanotubes

Unusual Metallic Microporous Boron Nitride Networks

Adsorption and Surface Reactivity on Single-Walled Boron Nitride Nanotubes Containing Stone-Wales Defects

Influence of point defects on the electronic properties of boron nitride nanosheets

Porous Boron Nitride with Tunable Pore Size

Fabrication of Atomically Precise Nanopores in Hexagonal Boron Nitride

Selective adsorption of first-row atoms on boron nitride nanotubes: the effect of localized states

Atomic configuration of nitrogen-doped single-walled carbon nanotubes

Effects of Antisite Defect Density on Crystal and Electronic Structures of Monolayer Hexagonal Boron Nitride

Ab Initio Investigation about the Possibility of Ferromagnetism Induced by Boron Vacancy in BN Nanotubes

Noncovalent Functionalization of Boron Nitride Nanotubes in Aqueous Media

Preparation of Isotropic Submicron Spherical Boron Nitride Particles by Restricted Template Method

Surface Growth of Boron Nitride Nanotubes Through Boron Source Design