Effects of Antisite Defect Density on Crystal and Electronic Structures of Monolayer Hexagonal Boron Nitride

Yifan Ding,Junkai Yang,Huaixiang Wang,Yu Ji,Qinwen Guo,Weipeng Wang,Xi Shen,Yuan Yao,Richeng Yu
DOI: https://doi.org/10.1002/pssr.202100216
2021-07-11
Abstract:The effect of antisite defects and their density on monolayer hexagonal boron nitride is discussed in detail in this paper. We set up different supercell sizes to simulate different defect densities. All structures containing antisites are fully optimized. It is indicated that the high density of antisite defects leads to the instability of the B-B bond. The influence of supercell size on lattice structure is also summarized. Like vacancies and dopant atoms, the antisite defects also lead to the appearance of the defect energy band. Different antisite defect densities have different effects on different orbitals. We also carried out electron energy-loss spectroscopy theoretical simulation on single atom to analyze the influence of antisite defect density on the electronic structure of a single atom. It is shown that the high density of antisite defects makes the σ* transition of B atoms far away from defect more preferrred than π* transition, while has less influence on the transition of central N atoms of antisite defect NB because of the influence of neighboring atoms. The concentration of antisite defects plays a key role in manipulating the physical properties of monolayer hexagonal boron nitride and will be helpful to expand potential application scenarios.This article is protected by copyright. All rights reserved.
physics, condensed matter, applied,materials science, multidisciplinary
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