Abstract:Density functional theory was utilized to study the electronic properties of boron nitride (BN) sheets, taking into account the presence of defects. The structure considered consisted of a central hexagon surrounded by alternating pentagons (three) and heptagons (three). The isocoronene cluster model with an armchair edge was used with three different chemical compositions. In the first structure, three B–B bonds were formed where one B in the dimer was part of the central hexagon. In the second structure, three N–N–N bonds were formed at the periphery of the cluster, around the central hexagon. In the third structure, three N–N bonds were formed in a similar fashion to the first model. Our results indicated that the third structure was the most stable configuration; this exhibited planar geometry, semiconductor behavior, and ionic character. To explore the effects of doping, we replaced B and N atoms with C atoms, considering different atomic positions in the central hexagon. When an N atom was replaced with a C atom, the new structure was a semiconductor, but when a B atom was replaced with a C atom, the new structure was a semimetal. At the same time, the polarity increased, inducing covalent behavior. Replacing two N atoms with two C atoms also resulted in a semiconductor, while replacing two B atoms with two C atoms yielded a semimetal; in both cases the bonding was covalent. When three B (three N) atoms of the central hexagon were replaced with three C atoms, the new structure exhibited a transition to a conductor (remained a semiconductor) with low polarity. When monovacancies (N) and divacancies (B and N) were inserted into the lattice, the system was transformed into a covalent semiconductor. Finally, the electrostatic potential surface was calculated in order to explore intermolecular properties such as the charge distribution, which showed how the reactivity of the boron nitride sheets was affected by doping and orbital hybridization.

Carbon Doping Effects on the Electronic Structure of Boron Nitride

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Electron-Beam-Induced Substitutional Carbon Doping of Boron Nitride Nanosheets, Nanoribbons, and Nanotubes

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Boron and carbon in two-dimensional nitrogene structures: Heterodoping, doping, and chemical functionalization

Effects of element doping on electronic structures and optical properties in cubic boron nitride from first-principles

Substitutional carbon doping of free-standing and Ru-supported BN sheets: A first-principles study.

Influence of point defects on the electronic properties of boron nitride nanosheets

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Insight into the Effect of Boron Doping on Electronic Structure, Photocatalytic and Adsorption Performance of G-C3n4 by First-Principles Study

Magnetism in BN Nanotubes Induced by Carbon Doping

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Doping Of Highly Tetrahedral Amorphous-Carbon

Post-synthesis Carbon Doping of Individual Multiwalled Boron Nitride Nanotubes Via Electron-Beam Irradiation.

Aligned carbon-doping to modulate thermal and electrical conductivity of boron carbon nitride grown from chemical vapor deposition

Carbon nanotubes with atomic impurities on boron nitride sheets under applied electric fields

Tuning the Electron Transport Properties of Boron-Nitride Nanoribbons with Electron and Hole Doping

Effects of Carbon-Doping on Superconductivity in Magnesium Diboride

First-principle Approach Based Bandgap Engineering for Cubic Boron Nitride Doped with Group IIA Elements