Abstract:In this work, Chemical Vapour Deposition (CVD) has been used to synthesize boron nitride (BN) nanostructures, particularly nanotubes, and selectively introduce defects into the lattice of the synthesized BN nanostructures through ion implantation. Scanning electron microscopy (SEM) images show clear evidence of BN nanostructures and BN nanotubes (BNNTs), with the latter appearing as long, thin structures with diameters ranging from ⁓30-80 nm. Raman analysis show an E2g mode of vibration assigned to hexagonal BN (h-BN) at 1366 cm-1 after ion implantation, with increased intensity. Grazing incidence X-ray diffraction (GIXRD) spectra revealed a prominent peak between 54 and 56°, corresponding to the (004) h-BN reflection, which was used to determine the average lattice parameter c⁓0.662 nm representing the stacking direction of the BN layers. The majority of the samples had broad peaks, indicative of a nanocrystalline material. The only exception was the sample grown at 1200 °C, which was found to have a Scherrer crystallite size >100 nm. In contrast, the rest of the samples had an average size of 3.5 nm. Notable observations in this study include a significant rise in the size of the Raman derived crystallite domains in the nanostructures synthesized at 1100 and 1200 °C after ion implantation with boron ions at fluence 5 × 1014 ions/cm2.

Structural systematics in boron-doped single wall carbon nanotubes

Tensile Properties of a Boron/nitrogen-Doped Carbon Nanotube–graphene Hybrid Structure

Band structure of boron doped carbon nanotubes

Fine Structure of Boron Nitride Nanotubes Produced from Carbon Nanotubes by A Substitution Reaction

Enhanced Electron Field Emission in B-doped Carbon Nanotubes

Electron-Beam-Induced Substitutional Carbon Doping of Boron Nitride Nanosheets, Nanoribbons, and Nanotubes

Atomic configuration of nitrogen-doped single-walled carbon nanotubes

Stochastic Heterostructures in B/N-Doped Carbon Nanotubes

Boron-doped carbon fullerenes and nanotubules formed through electron irradiation-induced solid-state phase transformation

Embedding Ba Monolayers and Bilayers in Boron Carbide Nanowires.

Continuum Modeling of Boron Nitride Nanotubes

Post-synthesis Carbon Doping of Individual Multiwalled Boron Nitride Nanotubes Via Electron-Beam Irradiation.

Unveiling the atomic structure of single-wall boron nanotubes

Multi- and Single-Walled Boron Nitride Nanotubes Produced from Carbon Nanotubes by A Substitution Reaction

Preparation and Structure of Boron Carbide Nanowires

The Structure of Boron-, Phosphorus- and Nitrogen-Doped Tetrahedral Amorphous Carbon Deposited by Cathodic Arc

Single-Walled B-Doped Carbon, B/N-Doped Carbon And Bn Nanotubes Synthesized From Single-Walled Carbon Nanotubes Through A Substitution Reaction

Recent Advances in Boron Nitride Nanotubes and Nanosheets

Investigating geometries and electronic states of boron and nitrogen Co-doping graphene nanoribbons from a DFTB algorithm

Synthesis and Modification of Boron Nitride nanotubes using ion implantation

Boron/Nitrogen Pairs Co-Doping in Metallic Carbon Nanotubes: A First-Principle Study