Abstract:The charge transport properties of individual, metallic nitrogen doped, single-walled carbon nanotubes are investigated. It is demonstrated that n-type conduction can be achieved by nitrogen doping. Evidence was obtained by appealing to electric-field effect measurements at ambient condition. The observed temperature dependencies of the zero-bias conductance indicate a disordered electron system with electric-dipole scattering, caused mainly by the pyridine-type nitrogen atoms in the honeycomb lattice. These results illustrate the possibility of creating all-metallic molecular devices, in which the charge carrier type can be controlled.

What problem does this paper attempt to address?

The main problems that this paper attempts to solve are: achieving n - type conduction in single - walled carbon nanotubes (SWNTs) through nitrogen doping and studying their charge - transport properties. Specifically, the author hopes to answer the following questions: 1. **How to achieve n - type conduction**: In single - walled carbon nanotubes, p - type conduction behavior is usually observed. However, in practical applications, being able to control the conduction type (i.e., achieving n - type and p - type conduction) is crucial for the development of all - metal molecular electronic devices based on carbon nanotubes. Therefore, the author hopes to achieve n - type conduction through nitrogen doping. 2. **The influence of nitrogen doping on charge transport**: Different bonding modes of nitrogen atoms in carbon nanotubes (such as graphite - type and pyridine - type) will have different effects on charge transport. The author hopes to understand how these different bonding modes affect the electrical properties of nanotubes, especially whether they will lead to phenomena such as electric dipole scattering. 3. **Scattering mechanisms in the low - energy limit**: Under low - temperature and zero - bias - voltage conditions, nitrogen - doped single - walled carbon nanotubes exhibit a temperature - dependent scattering mechanism. The author hopes to verify this scattering mechanism through experimental data and propose a corresponding theoretical model to explain the observed phenomena. ### Main conclusions - **Achievement of n - type conduction**: Through nitrogen doping, n - type conduction can indeed be achieved in single - walled carbon nanotubes. This makes it possible to develop all - metal molecular electronic devices based on carbon nanotubes. - **Electric dipole scattering mechanism**: Experimental results show that nitrogen - doped single - walled carbon nanotubes exhibit a scattering mechanism caused by electric dipoles at low temperatures, especially that pyridine - type nitrogen atoms are the main scattering sources. - **Support for the theoretical model**: The author proposes an empirical formula to describe the relationship between zero - bias conductance and temperature: \[ G(T)\sim(1 - \lambda_\tau T)^{-\gamma_\tau}\cdot\exp\left(-\frac{\chi_\tau}{(T - \lambda_\tau T^2)^{0.5}}\right) \] This formula has a good fit with the experimental data, further supporting the view that nitrogen atoms are electric dipole scattering centers. In summary, through experimental and theoretical analysis, this paper reveals the influence of nitrogen doping on the charge - transport properties of single - walled carbon nanotubes, providing an important scientific basis for the future development of high - performance electronic devices based on carbon nanotubes.

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