Abstract:Doping as one of the popular methods to manipulate the properties of nanomaterials has received extensive application in deriving different types of graphene derivates, while the understanding of the resonance properties of dopant graphene is still lacking in literature. Based on the large-scale molecular dynamics simulation, reactive empirical bond order potential, as well as the tersoff potential, the resonance properties of N-doped graphene were studied. The studied samples were established according to previous experiments with the N atom’s percentage ranging from 0.38%-2.93%, including three types of N dopant locations, i.e., graphitic N, pyrrolic N and pyridinic N. It is found that different percentages of N-dopant exert different influence to the resonance properties of the graphene, while the amount of N-dopant is not the only factor that determines its impact. For all the considered cases, a relative large percentage of N-dopant (2.65% graphitic N-dopant) is observed to introduce significant influence to the profile of the external energy, and thus lead to an extremely low Q-factor comparing with that of the pristine graphene. The most striking finding is that the natural frequency of the defective graphene with N-dopant’s percentage higher than 0.89% appears larger than its pristine counterpart. For the perfect graphene, the N-dopant shows larger influence to its natural frequency. This study will enrich the current understanding of the influence of dopants on graphene, which will eventually shed lights on the design of different molecules-doped graphene sheet.

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Tuneable Resonance Properties of Graphene by Nitrogen-Dopant

Nitrogen-Doped Graphene on Copper: Edge-Guided Doping Process and Doping-Induced Variation of Local Work Function

Atomic-scale Identification of Nitrogen Dopants in Graphene on Ir(111) and Ru(0001).

Atomically Well-defined Nitrogen Doping in the Cross-plane Transport through Graphene Heterojunctions

Atomically Well-Defined Nitrogen Doping for Cross-Plane Transport Through Graphene Heterojunctions

Nitrogen-doped Graphene: Beyond Single Substitution and Enhanced Molecular Sensing

Temperature-dependent Nitrogen Configuration of N-doped Graphene by Chemical Vapor Deposition

Tunable Electronic Properties of Graphene Through Controlling Bonding Configurations of Doped Nitrogen Atoms

Atomic-scale characterization of nitrogen-doped graphite: Effects of dopant nitrogen on the local electronic structure of the surrounding carbon atoms

Nitrogen-induced Local Spin Polarization in Graphene on Cobalt

Localized state and charge transfer in nitrogen-doped graphene

Tuning the Doping Types in Graphene Sheets by N Monoelement

Nitrogen-tuned Transition Metal Co Adatom Embedded Graphene

Large-Scale Growth and Characterizations of Nitrogen-Doped Monolayer Graphene Sheets

Revealing the Underlying Absorption and Emission Mechanism of Nitrogen Doped Graphene Quantum Dots.

Introduction of Nitrogen with Controllable Configuration into Graphene Via Vacancies and Edges

Properties of single-layer graphene doped by nitrogen with different concentrations

Atomic configuration of nitrogen-doped single-walled carbon nanotubes

Modulation of N-bonding configurations and their influence on the electrical properties of nitrogen-doped graphene

Formation, Structure, Electronic, and Transport Properties of Nitrogen Defects in Graphene and Carbon Nanotubes