Abstract:Doping as one of the popular methods to manipulate the properties of nanomaterials has received extensive application in deriving different types of graphene derivates, while the understanding of the resonance properties of dopant graphene is still lacking in literature. Based on the large-scale molecular dynamics simulation, reactive empirical bond order potential, as well as the tersoff potential, the resonance properties of N-doped graphene were studied. The studied samples were established according to previous experiments with the N atom’s percentage ranging from 0.38%-2.93%, including three types of N dopant locations, i.e., graphitic N, pyrrolic N and pyridinic N. It is found that different percentages of N-dopant exert different influence to the resonance properties of the graphene, while the amount of N-dopant is not the only factor that determines its impact. For all the considered cases, a relative large percentage of N-dopant (2.65% graphitic N-dopant) is observed to introduce significant influence to the profile of the external energy, and thus lead to an extremely low Q-factor comparing with that of the pristine graphene. The most striking finding is that the natural frequency of the defective graphene with N-dopant’s percentage higher than 0.89% appears larger than its pristine counterpart. For the perfect graphene, the N-dopant shows larger influence to its natural frequency. This study will enrich the current understanding of the influence of dopants on graphene, which will eventually shed lights on the design of different molecules-doped graphene sheet.

Properties of single-layer graphene doped by nitrogen with different concentrations

Tuneable Resonance Properties of Graphene by Nitrogen-Dopant

Resonance of Graphene Nanoribbons Doped with Nitrogen and Boron: a Molecular Dynamics Study

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Nitrogen-induced Local Spin Polarization in Graphene on Cobalt

Ab Initio Calculations for Structural, Electronic and Magnetic Behaviors of Nitrogenized Monolayer Graphene Decorated with 5d Transition Metal Atoms

Doping with Graphitic Nitrogen Triggers Ferromagnetism in Graphene

Influence of B doping and N doping on structure and electronic properties of graphene

Revealing the Underlying Absorption and Emission Mechanism of Nitrogen Doped Graphene Quantum Dots.

Spin-polarization and ferromagnetism of graphitic carbon nitride materials

<i>Ab</i>-<i>Initio</i> Study of the Electronic and Magnetic Properties of Boron- and Nitrogen-Doped Penta-Graphene

Certain Doping Concentrations Caused Half-Metallic Graphene

Tuning the Doping Types in Graphene Sheets by N Monoelement

Tunable Electronic Properties of Graphene Through Controlling Bonding Configurations of Doped Nitrogen Atoms

Modulation of N-bonding configurations and their influence on the electrical properties of nitrogen-doped graphene

Electronic structure of N-doped graphene with native point defects

Tuning the Electronic and Magnetic Properties of Porous Graphene-Like Carbon Nitride Through 3d Transition-Metal Doping

Synthesis, Structure and Properties of Boron and Nitrogen Doped Graphene

Density-functional Study on the Structural and Magnetic Properties of N-doped Graphene Oxide

Atomically Well-defined Nitrogen Doping in the Cross-plane Transport through Graphene Heterojunctions

Electronic Structure and Magnetic Properties in Nitrogen-doped from Density Functional Calculations