Production of Nitrogen-Doped Graphene by Low-Energy Nitrogen Implantation

W. Zhao,O. Höfert,K. Gotterbarm,J.F. Zhu,C. Papp,H.-P. Steinrück,O. Höfert,H.-P. Steinrück
DOI: https://doi.org/10.1021/jp209927m
2012-02-17
The Journal of Physical Chemistry C
Abstract:Nitrogen doping of graphene is a suitable route to tune the electronic structure of graphene, leading to n-type conductive materials. Herein, we report a simple way to insert nitrogen atoms into graphene by low-energy nitrogen bombardment, forming nitrogen-doped graphene. The formation of nitrogen-doped graphene is investigated with high resolution X-ray photoelectron spectroscopy, allowing to determine the doping level and to identify two different carbon–nitrogen species. By application of different ion implantation energies and times, we demonstrate that a doping level of up to 0.05 monolayers is achievable and that the branching ratio of the two nitrogen species can be varied.
chemistry, physical,nanoscience & nanotechnology,materials science, multidisciplinary
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