N-Doping of Graphene Through Electrothermal Reactions with Ammonia

Xinran Wang,Xiaolin Li,Li Zhang,Youngki Yoon,Peter K. Weber,Hailiang Wang,Jing Guo,Hongjie Dai
DOI: https://doi.org/10.1126/science.1170335
IF: 56.9
2009-01-01
Science
Abstract:Graphene is readily p-doped by adsorbates, but for device applications, it would be useful to access the n-doped material. Individual graphene nanoribbons were covalently functionalized by nitrogen species through high-power electrical joule heating in ammonia gas, leading to n-type electronic doping consistent with theory. The formation of the carbon-nitrogen bond should occur mostly at the edges of graphene where chemical reactivity is high. X-ray photoelectron spectroscopy and nanometer-scale secondary ion mass spectroscopy confirm the carbon-nitrogen species in graphene thermally annealed in ammonia. We fabricated an n-type graphene field-effect transistor that operates at room temperature.
What problem does this paper attempt to address?