Abstract:It is significantly important to modulate the electrical properties of graphene films through doping for building desired electronic devices. One of the effective doping methods is the chemical vapor deposition (CVD) of graphene films with heteroatom doping during the process, but this usually results in nitrogen-doped graphene with low doping levels, high defect density, and low carrier mobility. In this work, we developed a novel condensation-assisted CVD method for the synthesis of high-quality nitrogen-doped graphene (NG) films at low temperatures of 400 °C using solid 3,4,5-trichloropyridine as a carbon and nitrogen source. The condensation system was employed to reduce the volatilization of the solid source during the non-growth stage, which leads to a great improvement of quality of as-prepared NG films. Compared to the one synthesized using conventional CVD methods, the NG films synthesized using condensation-assisted CVD present extremely low defects with a ratio of from D- to G-peak intensity (ID/IG) in the Raman spectrum lower than 0.35. The corresponding total N content, graphitic nitrogen/total nitrogen ratio, and carrier mobility reach 3.2 at%, 67%, and 727 cm2V−1S−1, respectively. This improved condensation-assisted CVD method provides a facile and well-controlled approach for fabricating high-quality NG films, which would be very useful for building electronic devices with high electrical performance.

Synthesis of nitrogen-doped graphene by co-segregation method

Synthesis of Nitrogen-Doped Graphene Using Embedded Carbon and Nitrogen Sources

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Synthesis of N-doped graphene film with tunable graphitic and pyridinic doping content

Direct Synthesis of High-Quality Nitrogen-Doped Graphene Via Ion Implantation

Production of Nitrogen-Doped Graphene by Low-Energy Nitrogen Implantation

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

A Simple Method to Synthesize Continuous Large Area Nitrogen-Doped Graphene

Synthesis of nitrogen doped graphene with high electrocatalytic activity toward oxygen reduction reaction

Hydrogen-dominated metal-free growth of graphitic-nitrogen doped graphene with <i>n</i>-type transport behaviors

Nitrogen-induced Local Spin Polarization in Graphene on Cobalt

Toward N-Doped Graphene Via Solvothermal Synthesis

Synthesis of Nitrogen-Doped Graphene Via Thermal Annealing Graphene with Urea

Facile preparation of nitrogen-doped few-layer graphene via supercritical reaction.

Atomically Well-defined Nitrogen Doping in the Cross-plane Transport through Graphene Heterojunctions

Growth of Low-Defect Nitrogen-Doped Graphene Film Using Condensation-Assisted Chemical Vapor Deposition Method

Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport

Nitrogen and Boron Doped Monolayer Graphene by Chemical Vapor Deposition Using Polystyrene, Urea and Boric Acid

Low pressure chemical vapor deposition synthesis of large area hetero-doped mono- and few- layer graphene with nitrogen and oxygen species

One-step Synthesis of Nitrogen-Doped Graphene from a Sole Aromatic Precursor

Large-Scale Growth and Characterizations of Nitrogen-Doped Monolayer Graphene Sheets