Abstract:It is significantly important to modulate the electrical properties of graphene films through doping for building desired electronic devices. One of the effective doping methods is the chemical vapor deposition (CVD) of graphene films with heteroatom doping during the process, but this usually results in nitrogen-doped graphene with low doping levels, high defect density, and low carrier mobility. In this work, we developed a novel condensation-assisted CVD method for the synthesis of high-quality nitrogen-doped graphene (NG) films at low temperatures of 400 °C using solid 3,4,5-trichloropyridine as a carbon and nitrogen source. The condensation system was employed to reduce the volatilization of the solid source during the non-growth stage, which leads to a great improvement of quality of as-prepared NG films. Compared to the one synthesized using conventional CVD methods, the NG films synthesized using condensation-assisted CVD present extremely low defects with a ratio of from D- to G-peak intensity (ID/IG) in the Raman spectrum lower than 0.35. The corresponding total N content, graphitic nitrogen/total nitrogen ratio, and carrier mobility reach 3.2 at%, 67%, and 727 cm2V−1S−1, respectively. This improved condensation-assisted CVD method provides a facile and well-controlled approach for fabricating high-quality NG films, which would be very useful for building electronic devices with high electrical performance.

A Simple Method to Synthesize Continuous Large Area Nitrogen-Doped Graphene

Synthesis of Large-Scale Undoped and Nitrogen-Doped Amorphous Graphene on Mgo Substrate by Chemical Vapor Deposition

Low pressure chemical vapor deposition synthesis of large area hetero-doped mono- and few- layer graphene with nitrogen and oxygen species

One-step Synthesis of Nitrogen-Doped Graphene from a Sole Aromatic Precursor

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Direct Synthesis of High-Quality Nitrogen-Doped Graphene Via Ion Implantation

Novel Liquid Precursor-Based Facile Synthesis of Large-Area Continuous, Single, and Few-Layer Graphene Films

Nitrogen-Doped Graphene on Copper: Edge-Guided Doping Process and Doping-Induced Variation of Local Work Function

Synthesis of Nitrogen-Doped Graphene Using Embedded Carbon and Nitrogen Sources

Large-Scale Growth and Characterizations of Nitrogen-Doped Monolayer Graphene Sheets

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Growth of Low-Defect Nitrogen-Doped Graphene Film Using Condensation-Assisted Chemical Vapor Deposition Method

Nitrogen-doped Graphene: Beyond Single Substitution and Enhanced Molecular Sensing

Large-scale In-Situ Synthesis of Nitrogen-Doped Graphene Using Magnetically Rotating Arc Plasma

Synthesis of nitrogen-doped graphene by co-segregation method

Toward N-Doped Graphene Via Solvothermal Synthesis

Synthesis of nitrogen doped graphene with high electrocatalytic activity toward oxygen reduction reaction

Synthesis of N-doped graphene film with tunable graphitic and pyridinic doping content

Large scale synthesis of N-doped multi-layered graphene sheets by simple arc-discharge method

Synthesis of nitrogen-doped monolayer graphene with high transparent and n-type electrical properties

Production of Nitrogen-Doped Graphene by Low-Energy Nitrogen Implantation