Abstract:It is significantly important to modulate the electrical properties of graphene films through doping for building desired electronic devices. One of the effective doping methods is the chemical vapor deposition (CVD) of graphene films with heteroatom doping during the process, but this usually results in nitrogen-doped graphene with low doping levels, high defect density, and low carrier mobility. In this work, we developed a novel condensation-assisted CVD method for the synthesis of high-quality nitrogen-doped graphene (NG) films at low temperatures of 400 °C using solid 3,4,5-trichloropyridine as a carbon and nitrogen source. The condensation system was employed to reduce the volatilization of the solid source during the non-growth stage, which leads to a great improvement of quality of as-prepared NG films. Compared to the one synthesized using conventional CVD methods, the NG films synthesized using condensation-assisted CVD present extremely low defects with a ratio of from D- to G-peak intensity (ID/IG) in the Raman spectrum lower than 0.35. The corresponding total N content, graphitic nitrogen/total nitrogen ratio, and carrier mobility reach 3.2 at%, 67%, and 727 cm2V−1S−1, respectively. This improved condensation-assisted CVD method provides a facile and well-controlled approach for fabricating high-quality NG films, which would be very useful for building electronic devices with high electrical performance.

One-step Synthesis of Nitrogen-Doped Graphene from a Sole Aromatic Precursor

Synthesis of nitrogen doped graphene with high electrocatalytic activity toward oxygen reduction reaction

A Simple Method to Synthesize Continuous Large Area Nitrogen-Doped Graphene

One-step Chemical Vapor Synthesis of Ni/graphene Nanocomposites with Excellent Electromagnetic and Electrocatalytic Properties

Catalyst-free Synthesis of Nitrogen-Doped Graphene Via Thermal Annealing Graphite Oxide with Melamine and Its Excellent Electrocatalysis.

Large-Scale Growth and Characterizations of Nitrogen-Doped Monolayer Graphene Sheets

Toward N-Doped Graphene Via Solvothermal Synthesis

Large-scale In-Situ Synthesis of Nitrogen-Doped Graphene Using Magnetically Rotating Arc Plasma

Pure Pyridinic Nitrogen‐Doped Single‐Layer Graphene Catalyzes Two‐Electron Transfer Process of Oxygen Reduction Reaction

Direct Synthesis of High-Quality Nitrogen-Doped Graphene Via Ion Implantation

Synthesis of N-doped graphene film with tunable graphitic and pyridinic doping content

Synthesis of Nitrogen-Doped Graphene Using Embedded Carbon and Nitrogen Sources

Low pressure chemical vapor deposition synthesis of large area hetero-doped mono- and few- layer graphene with nitrogen and oxygen species

Growth of Low-Defect Nitrogen-Doped Graphene Film Using Condensation-Assisted Chemical Vapor Deposition Method

Nitrogen-doped Graphene: Beyond Single Substitution and Enhanced Molecular Sensing

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Synthesis of Large-Scale Undoped and Nitrogen-Doped Amorphous Graphene on Mgo Substrate by Chemical Vapor Deposition

Synthesis of nitrogen-doped monolayer graphene with high transparent and n-type electrical properties

One-Step Synthesis of N-Doped Graphene Quantum Dots from Chitosan as a Sole Precursor Using Chemical Vapor Deposition

Facile preparation of nitrogen-doped few-layer graphene via supercritical reaction.

"Inside Out" Growth Method for High-Quality Nitrogen-Doped Graphene