Abstract:Understanding the nature of metal/1D-semiconductor contacts such as metal/carbon nanotubes is a fundamental scientific and technological challenge for realizing high performance transistors\cite{Francois,Franklin}. A Schottky Barrier(SB) is usually formed at the interface of the $2D$ metal electrode with the $1D$ semiconducting carbon nanotube. As yet, experimental\cite{Appenzeller,Chen, Heinze, Derycke} and numerical \cite{Leonard, Jimenez} studies have generally failed\cite{Svensson} to come up with any functional relationship among the relevant variables affecting carrier transport across the SB owing to their unique geometries and complicated electrostatics. Here, we show that localized states called the metal induced gap states (MIGS)\cite{Tersoff,Leonard} already present in the barrier determines the transistor drain characteristics. These states seem to have little or no influence near the ON-state of the transistor but starts to affect the drain characteristics strongly as the OFF-state is approached. The role of MIGS is characterized by tracking the dynamics of the onset bias, $V_o$ of non-linear conduction in the drain characteristics with gate voltage $V_g$. We find that $V_o$ varies with the zero-bias conductance $G_o(V_g)$ for a gate bias $V_g$ as a power-law: $V_o$ $\sim $ ${G_o(V_g)}^x$ with an exponent $x$. The origin of this power-law relationship is tentatively suggested as a result of power-law variation of effective barrier height with $V_g$, corroborated by previous theoretical and experimental results\cite{Appenzeller}. The influence of MIGS states on transport is further verified independently by temperature dependent measurements. The unexpected scaling behavior seem to be very generic for metal/CNT contact providing an experimental forecast for designing state of the art CNT devices.

On Transport Properties of CNT Metal/semiconductor/metal Heterostructures Using First Principles Methods

Modeling of Carbon Nanotube Interconnects and Comparative Analysis with Cu Interconnects

Ab initio quantum transport study of metal-molecule-metal structures

Influence Of Electrode-Molecule Interface On Electron Transport

A Comprehensive Atomic Study Of Carbon Nanotube Schottky Diode Using First Principles Approach

Effects of metal–molecule interface conformations on the electron transport of single molecule

Structures, Properties, and Applications of CNT-graphene Heterostructures

Charge-Transport Behavior in Aligned Carbon Nanotubes: A Quantum-Chemical Investigation

Controlling the electronic transport through the carbon nanotube junction by local electronic environment

Excellent heat transfer enhancement of CNT-metal interface by loading carbyne and metal nanowire into CNT

Effect of Length and Size of Heterojunction on the Transport Properties of Carbon-Nanotube Devices

Interference effects in electronic transport through metallic single-wall carbon nanotubes

Conductance Spectra of Metallic Carbon Nanotube Bundles from First Principles

Quantum transport properties of hybrid zigzag C3N and C3B nanoribbons

Schottky Barrier Formation at Metal Electrodes and Semiconducting Carbon Nanotubes

Gap states controlled transmission through 1D Metal-Nanotube junction

Nanotube-Metal Junctions: 2- and 3- Terminal Electrical Transport

Electronic properties and quantum transport in Graphene-based nanostructures

Transitions Between Semiconductor and Metal Induced by Mixed Deformation in Carbon Nanotube Devices

Theoretical Study of the Electronic and Transport Properties of Lateral 2D–1D–2D Graphene–CNT–Graphene Structures

Real- And Mode-Space Simulation Of Electron Transport In Metallic Carbon Nanotubes Using Negf