Abstract:This study outlines the synthesis of copper sulfide (CuS) nanoparticles and their composites with carbon nanotubes (T-CuS) via a solvothermal reaction. X-ray diffraction techniques were employed to characterize the crystal structure of the synthesized materials. Thin films of both CuS and T-CuS were deposited using vacuum coating techniques to construct Schottky devices. Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) were utilized to examine the topography and surface morphology of the deposited films, enabling analysis of metal–semiconductor (MS) junction formation. The interfacial characteristics of MS junctions in Al/CuS and T-CuS/ITO designs were investigated using AC impedance spectroscopy (IS) over a frequency range of 40 Hz to 10 MHz. Bias-dependent impedance spectroscopy within a ± 1.0 V range was conducted to determine the equivalent circuit for the MS junction Schottky diodes (SDs). Parameters such as on/off ratio, series resistance, ideality factor, and barrier height of the fabricated diodes were derived from current–voltage ( I – V ) characteristics. Additionally, characteristics related to charge transport, including photosensitivity and conductivity, were calculated. The results indicate an enhanced performance of carbon nanotube-based Schottky devices, likely attributed to the strong interaction and synergy between CNTs and CuS nanoparticles.

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