Abstract:Metallicity/chirality‐pure single‐walled carbon nanotubes (SWCNTs) are promising materials for realizing post‐silicon electronics. Molecular doping is emerging as the primary doping approach for the structure‐controlled SWCNTs, enabling their eventual use in various devices. This review introduces the underlying physical process of molecular doping of SWCNTs, dopant materials, and doping effects in devices, and also discusses challenges and opportunities in this field. Single‐walled carbon nanotubes (SWCNTs) that have a reproducible distribution of chiralities or single chirality are among the most competitive materials for realizing post‐silicon electronics. Molecular doping, with its non‐destructive and fine‐tunable characteristics, is emerging as the primary doping approach for the structure‐controlled SWCNTs, enabling their eventual use in various functional devices. This review provides an overview of important advances in the area of molecular doping of structure‐controlled SWCNTs and their applications. The first part introduces the underlying physical process of molecular doping, followed by a comprehensive survey of the commonly used dopants for SWCNTs to date. Then, it highlights how the convergence of molecular doping and structure‐sorting strategies leads to significantly improved functionality of SWCNT‐based field‐effect transistor arrays, transparent electrodes in optoelectronics, thermoelectrics, and many emerging devices. At last, several challenges and opportunities in this field are discussed, with the hope of shedding light on promoting the practical application of SWCNTs in future electronics.

A First-Principles Study of B/N Doping on the Transport Properties of Ultrafine Single-Walled Carbon Nanotubes

Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene.

Ion-Exchange Doping of Semiconducting Single-Walled Carbon Nanotubes

First-Principles Study of Li Doping in a Double-Wall Carbon Nanotube

A Doping-Free Approach to Carbon Nanotube Electronics and Optoelectronics

A Comprehensive Atomic Study Of Carbon Nanotube Schottky Diode Using First Principles Approach

Intrinsic region length scaling of heavily doped carbon nanotube p-i-n junctions.

On Transport Properties of CNT Metal/semiconductor/metal Heterostructures Using First Principles Methods

First-principles Study of the Effects of Si Doping on Geometric and Electronic Structure of Closed Carbon Nanotube

Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping.

Synthesis of Nitrogen-Doped Single-Walled Carbon Nanotubes and Monitoring of Doping by Raman Spectroscopy

Electron transport in metallic carbon nanotubes with multiple B and N dopants

Molecular Doping Modulation and Applications of Structure‐Sorted Single‐Walled Carbon Nanotubes: A Review

Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

Controlling the electronic transport through the carbon nanotube junction by local electronic environment

Boron/Nitrogen Pairs Co-Doping in Metallic Carbon Nanotubes: A First-Principle Study

Carbon Nanotube Electronics: Recent Advances

Nitrogen‐Doped Single‐Walled Carbon Nanotubes Grown on Substrates: Evidence for Framework Doping and Their Enhanced Properties

Electronic structures and quantum capacitance of single-walled carbon nanotubes doped by 3d transition-metals: A first principles study

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors

Quantum Confinement Of Crystalline Silicon Nanotubes With Nonuniform Wall Thickness: Implication To Modulation Doping