Abstract:Random networks of single-walled carbon nanotubes (SWCNTs) were have been grown by chemical vapor deposition on silicon wafers and used for fabricating field-effect transistors (FETs) using symmetric Pd contacts and diodes using asymmetrical Pd and Sc contacts. For a short channel FET or diode with a channel length of about 1 μm or less, the device works in the direct transport regime, while for a longer channel device the transport mechanism changes to percolation. Detailed electronic and photovoltaic (PV) characterizations of these carbon nanotube (CNT) thin-film devices was carried out. While as-fabricated FETs exhibited typical p -type transfer characteristics, with a large current ON/OFF ratio of more than 10 4 when metallic CNTs were removed via a controlled breakdown, it was found that the threshold voltage for the devices was typically very large, of the order of about 10 V. This situation was greatly improved when the device was coated with a passivation layer of 12 nm HfO 2 , which effectively moved the threshold voltages of both FET and diode back to center around zero or turned these device to their OFF states when no bias was applied on the gate. PV measurements were then made on the short channel diodes under infrared laser illumination. It was shown that under an illumination power density of 1.5 kW/cm 2 , the device resulted in an open circuit voltage V OC = 0.21 V and a short circuit current I SC = 3.74 nA. Furthermore, we compared PV characteristics of CNT film diodes with different channel lengths, and found that the power transform efficiency decreased significantly when the device changed from the direct transport to the percolation regime.

Intrinsic region length scaling of heavily doped carbon nanotube p-i-n junctions.

Nano-engineering Thermal Transport Performance of Carbon Nanotube Networks with Polymer Intercalation: a Molecular Dynamics Study.

Negative Rectification and Negative Differential Resistance in Nanoscale Single-Walled Carbon Nanotube P-N Junctions

A First-Principles Study of B/N Doping on the Transport Properties of Ultrafine Single-Walled Carbon Nanotubes

First Principle Study of Electron Transport in Single-Walled Carbon Nanotubes of 2 to 22 Nm in Length

Electrical properties of 0.4 cm long single-walled carbon nanotubes

Length Scaling of Carbon Nanotube Electric and Photo Diodes Down to Sub-50 Nm

Ion-Exchange Doping of Semiconducting Single-Walled Carbon Nanotubes

Channel-length-dependent Transport and Photovoltaic Characteristics of Carbon-Nanotube-based, Barrier-Free Bipolar Diode.

Diameter-Dependent Ultrafast Lithium-Ion Transport in Carbon Nanotubes

Electronic Structures and Transportation Properties of Sub-60 Nm Long Single-Walled Carbon Nanotubes

Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics

Quantum Confinement Of Crystalline Silicon Nanotubes With Nonuniform Wall Thickness: Implication To Modulation Doping

Simulation of carbon nanotube based p–n junction diodes

Effect of Length and Size of Heterojunction on the Transport Properties of Carbon-Nanotube Devices

PN junction and band to band tunneling in carbon nanotube transistors at room temperature

First-Principles Study of Li Doping in a Double-Wall Carbon Nanotube

Unusual Electrical Conductivity Enhancement in Stable n-Type Carbon Nanotube Networks

Large Negative Differential Resistance in a Molecular Junction of Carbon Nanotube and Anthracene

A nanoscale pn junction in series with tunable Schottky barriers