Abstract:Using nonequilibrium Green’s functions in combination with density-functional theory (DFT), we investigated the electronic transport properties of the silicon monatomic chains (SiMCs) with different geometries which were induced by the encapsulation of the carbon nanotubes (CNTs). The encapsulated SiMCs, which were put inside (5,5), (6,6), (7,7) and (8,8) hydrogenated armchair CNTs, were coupled to two Au (100) nanoscale electrodes. The electronic transport property of an isolated finite SiMC was also studied to serve as a reference to our calculations. As the diameter of CNTs increases, the geometry structures of SiMCs changed. Calculated results show that the current–voltage (I–V) characteristics depend sensitively on the geometry structures of SiMCs and can be controlled by the size-selective encapsulation. Negative differential resistance (NDR) phenomena were observed within certain bias voltage ranges. A detailed analysis of the origin of NDR was carried out with the transmission spectrum, the spatial distribution of frontier molecular orbitals and the molecular projected self-consistent Hamiltonian (MPSH) states taken into consideration. These results indicated that the size-selective encapsulation of SiMCs in CNTs can become a possible candidate for designing the silicon-based nanoelectronic devices.

Negative Rectification and Negative Differential Resistance in Nanoscale Single-Walled Carbon Nanotube P-N Junctions

Negative differential resistance in nanotube devices

Negative Differential Resistance in Parallel Single-Walled Carbon Nanotube Contacts

Large Negative Differential Resistance in a Molecular Junction of Carbon Nanotube and Anthracene

Intrinsic region length scaling of heavily doped carbon nanotube p-i-n junctions.

Current-voltage Characteristics and Parameter Retrieval of Semiconducting Nanowires

Negative Differential Resistance and Rectification Effects in Step-Like Graphene Nanoribbons

Negative Differential Resistance Behavior of Silicon Monatomic Chain Encapsulated in Carbon Nanotubes

Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices

Family-Dependent Rectification Characteristics in Ultra-Short Graphene Nanoribbon P–n Junctions

Effect of Length and Size of Heterojunction on the Transport Properties of Carbon-Nanotube Devices

Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Water Compression Induced Ionic Negative Differential Resistance in Nanopores.

Nonlinear Thermal Conductance In Single-Wall Carbon Nanotubes: Negative Differential Thermal Resistance

Doping-induced Giant Rectification and Negative Differential Conductance (NDC) Behaviors in Zigzag Graphene Nano-Ribbon Junction

A First-Principles Study of B/N Doping on the Transport Properties of Ultrafine Single-Walled Carbon Nanotubes

Electronic Transport in Single-Walled Carbon Nanotube/graphene Junction

Negative Differential Resistance Behaviors in Porphyrin Molecular Junctions Modulated with Side Groups

Negative Thermophoresis in Concentric Carbon Nanotube Nanodevices.

Electrode Conformation-Induced Negative Differential Resistance and Rectifying Performance in A Molecular Device

Electronic Structures and Transportation Properties of Sub-60 Nm Long Single-Walled Carbon Nanotubes