Abstract:Graphene and molybdenum disulfide are two-dimensional novel materials considered promising for nanoscale electronic devices. Due to high carrier mobility and in spite of lacking a bandgap, nanoscale graphene transistors have been demonstrated to reach a cut-off frequency above 400 GHz. The absence of bandgap in graphene leads to a remarkable band-to-band tunneling property in electron devices with negative differential resistance. Ultra-thin field-effect transistors fabricated with graphene as gate conducting channels have been shown experimentally to exhibit negative differential resistance (NDR) with widespread appeal for both digital and analog electronics. NDR devices like the Esaki p–n junction have been known to have applications for high frequency oscillators, fast logic switches, memories and low-power amplifiers. In this work, a semi-analytical model equation for transfer characteristics of graphene transistors is developed to successfully model the NDR. Data from three known experimental devices exhibiting NDR with gate length from 500 nm to 3 μm are shown to match well with theoretical modeled results. Numerical calculations using the model equation show that at a fixed gate bias, NDR can be modulated by tuning the value of contact resistance. The result also shows that separate onset of NDR in purely electron current or hole current can be modeled with this equation and matches experimental data.

Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices

Negative Differential Resistance in Parallel Single-Walled Carbon Nanotube Contacts

A Transverse Tunnelling Field-Effect Transistor Made from a Van Der Waals Heterostructure

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

Negative Differential Resistance in Graphene Nanoribbon Superlattice Field-Effect Transistors

Negative Differential Resistance Behavior of Silicon Monatomic Chain Encapsulated in Carbon Nanotubes

Negative Differential Resistances in Graphene Double Barrier Resonant Tunneling Diodes

Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Negative differential resistance in nanotube devices

Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Modulation of Negative Differential Resistance in Black Phosphorus Transistors

Large Negative Differential Resistance in a Molecular Junction of Carbon Nanotube and Anthracene

Negative Differential Resistance in Carbon-Based Nanostructures

A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Homostructured negative differential resistance device based on zigzag phosphorene nanoribbons

Investigation of negative differential resistance on negative capacitance Germanium source vertical TFET

Three-terminal graphene negative differential resistance devices.