Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Negative Differential Resistances in Graphene Double Barrier Resonant Tunneling Diodes

Three-terminal graphene negative differential resistance devices.

Negative differential resistance of viscous electron flow in graphene

Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Negative Differential Resistance in Graphene Nanoribbon Superlattice Field-Effect Transistors

Chiral Selective Tunneling Induced Negative Differential Resistance in Zigzag Graphene Nanoribbon: A Theoretical Study

Negative Differential Resistance in Carbon-Based Nanostructures

Graphene Nanoribbon As A Negative Differential Resistance Device

Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers

Negative Differential Resistance and Rectification Effects in Step-Like Graphene Nanoribbons

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

Magnetic-field-controlled negative differential conductance in graphene npn junction resonators

Negative Differential Resistance and Spin-Filtering Effects in Zigzag Graphene Nanoribbons with Nitrogen-Vacancy Defects

Atomic‐Scale Characterization of Negative Differential Resistance in Ferroelectric Bi 2 WO 6

Carrier Sheet Density Constrained Anomalous Current Saturation of Graphene Field Effect Transistors: Kinks and Negative Differential Resistances.

Gate-Tunable Negative Differential Resistance Behaviors in a Hbn-Encapsulated BP-MoS2 Heterojunction