Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Magnetic-field-controlled negative differential conductance in graphene npn junction resonators

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Gate-tunable negative differential conductance in hybrid semiconductor-superconductor devices

Electric-Field-Driven Negative Differential Conductance in 2D van der Waals Ferromagnet Fe 3 GeTe 2

Negative Differential Resistances in Graphene Double Barrier Resonant Tunneling Diodes

Appearance of Negative Differential Conductivity in Graphene Nanoribbons at High-Harmonics

Tunneling Negative Magnetoresistance Via Δ Doping in a Graphene-Based Magnetic Tunnel Junction

Magnetic-Field-Tunable Valley-Contrasting Pseudomagnetic Confinement in Graphene.

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Persistent current distributions along a p-n junction in graphene in a magnetic field

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Temperature dependent crossover between positive and negative magnetoresistance in graphene nanocrystallines embedded carbon film

Non-Ohmic negative longitudinal magnetoresistance in a two-dimensional electron gas

Doping-induced Giant Rectification and Negative Differential Conductance (NDC) Behaviors in Zigzag Graphene Nano-Ribbon Junction

Three-terminal graphene negative differential resistance devices.

Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Graphene Acoustic Phonon-Mediated Pseudo-Landau Levels Tailoring Probed by Scanning Tunneling Spectroscopy.

Negative Differential Resistance and Rectification Effects in Step-Like Graphene Nanoribbons

Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene

Negative Tunnel Magnetoresistance and Spin Transport in Ferromagnetic Graphene Junctions