Abstract:Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical properties, making them promising nano-materials for the next-generation electronic systems. A large number of heterostructures have been fabricated by stacking of various 2D materials to achieve different functionalities. In this work, we simulate the electron transport properties of a three-terminal multilayer heterostructure made from graphene nanoribbons vertically sandwiching a boron nitride tunneling barrier. To investigate the effects of the unavoidable misalignment in experiments, we introduce a tunable angular misorientation between 2D layers to the modeled system. Current-Voltage (I-V) characteristics of the device exhibit multiple NDR peaks originating from distinct mechanisms. A unique NDR mechanism arising from the lattice mismatch is captured and it depends on both the twisting angle and voltage bias. Analytical expressions for the positions of the resonant peaks observed in I-V characteristic are developed. To capture the slight degradation of PVR ratios observed in experiments when temperature increases from 2K to 300K, electron-photon scattering decoherence has been added to the simulation, indicating a good agreement with experiment works as well as a robust preservation of resonant tunneling feature.

Tunneling Negative Magnetoresistance Via Δ Doping in a Graphene-Based Magnetic Tunnel Junction

Negative Tunnel Magnetoresistance and Spin Transport in Ferromagnetic Graphene Junctions

Theory Of Huge Tunneling Magnetoresistance In Graphene

Electronic Transport in Ferromagnetic Barriers on the Surface of a Topological Insulator with Δ Doping

Doping-induced Giant Rectification and Negative Differential Conductance (NDC) Behaviors in Zigzag Graphene Nano-Ribbon Junction

Magnetic-field-controlled negative differential conductance in graphene npn junction resonators

Tunneling Magnetoresistance in Junctions Composed of Ferromagnets and Time-Reversal Invariant Topological Superconductors

Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB

Magnetic Logic Inverter from Crossed Structures of Defect-Free Graphene with Large Unsaturated Room Temperature Negative Magnetoresistance

Giant magnetoresistance effect due to the tunneling between quantum anomalous Hall edge states

Magnetic Field Modulation of Chiral Tunneling in Graphene Heterojunctions

Tunable Tunneling Magnetoresistance in van der Waals Magnetic Tunnel Junctions with 1 T-CrTe2 Electrodes

The Effect of Magnetic Field on Chiral Transmission in P-N-p Graphene Junctions

Magnetoresistance in Arrays of Fine Graphite Powders with Nearest-Neighbor Tunneling Conduction

Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in $ν=0$ state

Magnetic Transport Properties of a Trigonal Graphene Sandwiched Between Graphene Nanoribbon Electrodes

Temperature dependent crossover between positive and negative magnetoresistance in graphene nanocrystallines embedded carbon film

High Magnetoresistance Ratio on hBN Boron-Vacancy/Graphene Magnetic Tunnel Junction

Interfacial Resonance States-Induced Negative Tunneling Magneto-Resistance in Orthogonally Magnetized CoFeB/MgO/CoFeB

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions