Abstract:The short‐channel tunneling transistor comprising all 2D components is developed, exhibiting high switching performance due to the energy band modulation of vertical heterojunction through the dual‐gates. Leveraging the unique short‐channel and tunneling mechanism, it can circumvent the general issues of voltage spikes and long reverse recovery time, realizing an access to high‐frequency integrated circuits (IC) interface. With continuous size scaling, the surface dangling bonds and short‐channel effects will degrade silicon based transistor performance. Thus, it is of great importance to seek new channel materials and transistor architectures to further continue Moore's law. Herein, a new ultra‐thin short‐channel tunneling transistor is developed comprising all 2D‐ components. Distinct from usual 2D planar transistor, this device is configured with vertical MoS2/WSe2 junction and in‐plane WSe2 channel, the switch states are realized by the gate‐regulated barrier height of heterojunction, enabling the transition of transport mechanism between thermionic‐emission and tunneling. Under dual‐gate configuration, the transistor exhibits high performance with drive current of 4.58 μA, on/off ratio of 4 × 107, subthreshold swing (SS) of 97 mV decade−1 and drain‐induced barrier lowering (DIBL) of 12 mV V−1, that can meet the requirement of logical applications in integrated circuits (IC). Taking advantage of the high‐speed tunneling current and unique short‐channel architecture, the device overcomes the issues of voltage spikes and long reverse recovery time that exist in usual electric components, and thus gains an access to the IC interface. This work provides a proof‐of‐concept transistor architecture relying on dual‐gate modulation, opening up a promising perspective for next generation low‐power, high‐density, and large‐scale IC technologies.

A Transverse Tunnelling Field-Effect Transistor Made from a Van Der Waals Heterostructure

Negative Transconductance and Negative Differential Resistance in Asymmetric Narrow Bandgap 2D-3D Heterostructures

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

2D Steep‐Slope Tunnel Field‐Effect Transistors Tuned by van der Waals Ferroelectrics

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

A metal/oxide tunneling transistor

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices

Vertical WS2/SnS2 Van Der Waals Heterostructure for Tunneling Transistors.

Heteromaterial Gate Tunnel Field Effect Transistor with Lateral Energy Band Profile Modulation

High performance tunnel field-effect transistor by gate and source engineering.

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Tunable Current Regulative Diode Based on Van Der Waals Stacked MoS2/WSe2 Heterojunction–Channel Field‐Effect Transistor

Towards ultralow-power and high-speed electronics: Tunnel transistor based on single-chain Tellurium