Abstract:Anti-ambipolar behavior has been observed in multilayer two-dimensional semiconductors and many p–n junctions. However, temperatures in the range of tens of kelvin are usually required, and there are gaps in the understanding of the underlying physics, most notably the roles of the space charge region and van der Waals (vdW) heterojunction. Here, we systematically investigate the unique transport and transfer characteristics of vertically stacked vdW contacted p-WSe2/n-SnS2 and p-WSe2/n-MoS2 junctions. Interestingly, robust anti-ambipolar behavior is observed at low and room temperature for both darkened and illuminated conditions. A peak-to-valley current ratio exceeding 104 and on-state gating field ranging from −0.3 × 106 to 0.57 × 106 V/cm are achieved at room temperature in darkness. Moreover, the rectifying effect and the type of majority charge carrier of the WSe2/SnS2 junction can be tuned by an electric gate. Robust Raman quenching over the whole interface induced by strong charge transfer is also observed. Based on an equivalent circuit model, a Poisson and drift-diffusion simulation, and experiments with local illumination, we highlight the role of the van der Waals heterojunction. We show that the observed unique anti-ambipolar behavior is due to the recombination of electrons and holes at the space charge region rather than carrier diffusion in the turned-off metal-oxide-semiconductor field-effect transistor (MOSFET). A larger vdW barrier and interface recombination at the vdW barrier are key to having a strong on/off ratio especially at room temperature. The p–n vdW heterostructure plays the roles of a complementary MOSFET connecting with a heterojunction diode, not only a ternary logic inverter but also a tunable multiple-gain amplifier in wide-range gating fields. The width of the middle logic plateau can reach 45 V in a WSe2/MoS2 junction.

Tunable Current Regulative Diode Based on Van Der Waals Stacked MoS2/WSe2 Heterojunction–Channel Field‐Effect Transistor

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p–n Junctions

WSe2/MoS2 and MoTe2/SnSe2 Van Der Waals Heterostructure Transistors with Different Band Alignment.

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

MoTe2/SnSe2 Tunneling Diode Regulated by Giant Ferroelectric Field

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

2D Materials As Semiconducting Gate for Field-Effect Transistors with Inherent Over-Voltage Protection and Boosted ON-current

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

Independent Band Modulation in 2D Van Der Waals Heterostructures Via a Novel Device Architecture

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Realization of High Current Gain for Van der Waals MoS2/WSe2/MoS2 Bipolar Junction Transistor

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

A New Device Architecture Based on Two Dimensional Van Der Waals Heterostructures

In-plane Schottky-barrier field-effect transistors with a 4-nm channel based on 1T/2H MoTe<sub>2</sub> and WTe<sub>2</sub>

Gate Stack Engineering in MoS<sub>2</sub>Field-Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS 2 –BN–Graphene van der Waals Heterostructures

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces